參數資料
型號: M58LW032D90ZA6E
廠商: 意法半導體
英文描述: 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory
中文描述: 32兆位4Mb的× 8,功能的2Mb x16插槽,統(tǒng)一座3V電源快閃記憶體
文件頁數: 5/51頁
文件大小: 748K
代理商: M58LW032D90ZA6E
5/51
M58LW032D
SUMMARY DESCRIPTION
The M58LW032D is a 32 Mbit (4Mb x 8 or 2Mb
x16) non-volatile memory that can be read, erased
and reprogrammed. These operations can be per-
formed using a single low voltage (2.7V to 3.6V)
core supply.
The memory is divided into 32 blocks of 1Mbit that
can be erased independently so it is possible to
preserve valid data while old data is erased. Pro-
gram and Erase commands are written to the
Command Interface of the memory. An on-chip
Program/Erase Controller simplifies the process of
programming or erasing the memory by taking
care of all of the special operations that are re-
quired to update the memory contents. The end of
a Program or Erase operation can be detected and
any error conditions identified in the Status Regis-
ter. The command set required to control the
memory is consistent with JEDEC standards.
The Write Buffer allows the microprocessor to pro-
gram from 1 to 16 Words in parallel, both speeding
up the programming and freeing up the micropro-
cessor to perform other work. A Word Program
command is available to program a single word.
Erase can be suspended in order to perform either
Read or Program in any other block and then re-
sumed. Program can be suspended to Read data
in any other block and then resumed. Each block
can be programmed and erased over 100,000 cy-
cles.
The M58LW032D has several security features to
increase data protection.
I
Block Protection, where each block can be
individually protected against program or erase
operations. All blocks are protected during
power-up. The protection of the blocks is non-
volatile; after power-up the protection status of
each block is restored to the state when power
was last removed.
I
Program Erase Enable input V
PEN
, program or
erase operations are not possible when the
Program Erase Enable input V
PEN
is low.
I
128 bit Protection Register, divided into two 64
bit segments: the first contains a unique device
number written by ST, the second is user
programmable.
The
segment can be protected.
The Reset/Power-Down pin is used to apply a
Hardware Reset to the enabled memory and to set
the device in power-down mode.
The device features an Auto Low Power mode. If
the bus becomes inactive during read operations,
the device automatically enters Auto Low Power
mode. In this mode the power consumption is re-
duced to the Auto Low Power supply current.
The STS signal is an open drain output that can be
used to identify the Program/Erase Controller sta-
tus. It can be configured in two modes: Ready/
Busy mode where a static signal indicates the sta-
tus of the P/E.C, and Status mode where a pulsing
signal indicates the end of a Program or Block
Erase operation. In Status mode it can be used as
a system interrupt signal, useful for saving CPU
time.
The memory is available in TSOP56 (14 x 20 mm)
and TBGA64 (10x13mm
,
1mm pitch) packages.
user
programmable
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相關代理商/技術參數
參數描述
M58LW032D90ZA6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory
M58LW032D90ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory
M58LW032DN 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory
M58LW032DZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory
M58LW064 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories