參數(shù)資料
型號: M58LW032D110ZA1T
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory
中文描述: 32兆位4Mb的× 8,功能的2Mb x16插槽,統(tǒng)一座3V電源快閃記憶體
文件頁數(shù): 50/51頁
文件大?。?/td> 748K
代理商: M58LW032D110ZA1T
M58LW032D
50/51
REVISION HISTORY
Table 30. Document Revision History
Date
Version
Revision Details
04-Jun-2002
-01
First Issue
16-Jun-2002
1.1
Revision numbering modified: a minor revision will be indicated by incrementing the
digit after the dot, and a major revision, by incrementing the digit before the dot.
(revision version 01 becomes 1.0).
Figure 5 modified. t
WHDX
and t
WHAX
modified in Table 17.
06-Aug-2002
2.0
Device Code changed, Word Effective Programming Time modified, V
DDQ
range
modified (esp. in Tables 12 and 22, and V
DDQ
removed from note 1 below Table 9).
Block Erase and Program Write Buffer Time parameters modified in Table 9.
90ns Speed Class added (Table 15, 16, 17, 18, 19 and 22 modified accordingly).
Figure 2, Logic Diagram modified. V
DD
, V
DDQ
, V
SS
and V
SSQ
pin descriptions
modified. Document status changed from Product Preview to Preliminary Data.
14-Oct-2002
2.1
A0 Address Line described separately from others (A1-A21) in Table 1 and in
“SIGNAL DESCRIPTIONS” paragraph. Address Lines modified in Table 3, Bus
Operations. Byte signal added to Figure 9, Bus Read AC Waveforms, timings t
ELBL
,
t
BLQV
and t
BLQZ
added to Table 15, Bus Read AC Characteristics, timings t
AVLH
and
t
ELLH
removed from Table 18, Write AC Characteristics, Chip Enable Controlled. Chip
Enable Controlled. “Write 70h” removed from flowchart Figures 17 and 19. Table 3,
Bus operations, clarified. REVISION HISTORY moved to after the appendices.
16-Dec-2002
2.2
Table 9, Program, Erase Times and Program Erase Endurance Cycles table modified.
Table 6, Read Electronic Signature table clarified. Certain DU connections changed to
NC in Table 4, TBGA64 Connections (Top view through package). x8 Address
modified in Table 24, Query Structure Overview. Note regarding A0 value in x8 mode
added to all CFI Tables. Block Protect setup command address modified in Table 4,
Commands. Data and Descriptions clarified in CFI Table 29, Extended Query
information. I
OSC
parameter added to Absolute Maximum Ratings table. I
DD
and
V
LKO
clarified and
I
DDO
and
V
PENH
parameters added to DC Characteristics table. t
PHWL
parameter added to Reset, Power-Down and Power-Up AC Waveforms figure and
Characteristics table.
30-May-2003
2.3
Summary Description clarified, Bus Operations clarified, READ MODES section
added, Status Register bit nomenclature modified, V
PEN
Invalid Error clarified in
Flowcharts. Lead-free packing options added to Ordering Information Scheme.
12-Sep-2003
2.4
t
EHAX
and t
EHDX
minimum values modified in Table 18, Write AC Characteristics, Chip
Enable Controlled.
Full datasheet.
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M58LW032D110ZA6 功能描述:閃存 4Mx8 or 2Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58LW032D110ZA6E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory
M58LW032D110ZA6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory
M58LW032D110ZA6T 功能描述:閃存 4Mx8 or 2Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58LW032D90N1 功能描述:閃存 4Mx8 or 2Mx16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel