參數(shù)資料
型號： M58LW032D110N6T
廠商： 意法半導體
英文描述： 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory
中文描述： 32兆位4Mb的× 8，功能的2Mb x16插槽，統(tǒng)一座3V電源快閃記憶體
文件頁數(shù)： 27/51頁
文件大?。?/td> 748K
代理商： M58LW032D110N6T
27/51
M58LW032D
Figure 9. Bus Read AC Waveforms
Note: 1. V
IH
= Device Disabled (first edge of E0, E1 or E2), V
IL
= Device Enabled (first edge of E0, E1 or E2). Refer to Table 2 for more
details.
2. BYTE can be Low or High.
Table 15. Bus Read AC Characteristics.
Symbol
Parameter
Test Condition
M58LW032D
Unit
90
110
t
AVAV
Address Valid to Address Valid
E = V
IL
, G = V
IL
Min
90
110
ns
t
AVQV
Address Valid to Output Valid
E = V
IL
, G = V
IL
Max
90
110
ns
t
AXQX
Address Transition to Output Transition
E = V
IL
, G = V
IL
Min
0
0
ns
t
BLQV
Byte Low (or High) to Output Valid
E = V
IL
, G = V
IL
Max
1
1
μs
t
BLQZ
Byte Low (or High) to Output Hi-Z
E = V
IL
, G = V
IL
Max
1
1
μs
t
EHQX
Chip Enable High to Output Transition
G = V
IL
Min
0
0
ns
t
EHQZ
Chip Enable High to Output Hi-Z
G = V
IL
Max
25
25
ns
t
ELBL
Chip Enable Low to Byte Low (or High)
G = V
IL
Max
10
10
ns
t
ELQX
Chip Enable Low to Output Transition
G = V
IL
Min
0
0
ns
t
ELQV
Chip Enable Low to Output Valid
G = V
IL
Max
90
110
ns
t
GHQX
Output Enable High to Output Transition
E = V
IL
Min
0
0
ns
t
GHQZ
Output Enable High to Output Hi-Z
E = V
IL
Max
15
15
ns
t
GLQX
Output Enable Low to Output Transition
E = V
IL
Min
0
0
ns
t
GLQV
Output Enable Low to Output Valid
E = V
IL
Max
25
25
ns
AI06239b
E2, E1, E0
(1)
G
A0-A21
DQ0-DQ15
VALID
tAXQX
tELQX
tAVQV
tGLQV
tEHQZ
tGHQX
OUTPUT
tAVAV
tEHQX
tGHQZ
tGLQX
tELQV
BYTE
(2)
tELBL
tBLQV
tBLQZ
相關(guān)PDF資料
PDF描述
M58LW032D110ZA6T 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory
M58LW032D90N1 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory
M58LW032D90ZA1 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory
M58LW064AZA 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064A150NF6T 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LW032D110ZA1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory
M58LW032D110ZA1E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory
M58LW032D110ZA1F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory
M58LW032D110ZA1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory
M58LW032D110ZA6 功能描述:閃存 4Mx8 or 2Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*