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參數(shù)資料
| 型號(hào)： | M58LW032C90ZA1F |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| 中文描述： | 32兆位的2Mb x16插槽，統(tǒng)一座，突發(fā)3V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 6/61頁(yè) |
| 文件大小： | 845K |
| 代理商： | M58LW032C90ZA1F |
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M58LW032C
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SUMMARY DESCRIPTION
M58LW032C is a 32 Mbit (2Mb x16) non-volatile
memory that can be read, erased and repro-
grammed. These operations can be performed us-
ing a single low voltage (2.7V to 3.6V) core supply.
On power-up the memory defaults to Read mode
with an asynchronous bus where it can be read in
the same way as a non-burst Flash memory.
The memory is divided into 32 blocks of 1Mbit that
can be erased independently so it is possible to
preserve valid data while old data is erased. Pro-
gram and Erase commands are written to the
Command Interface of the memory. An on-chip
Program/Erase Controller simplifies the process of
programming or erasing the memory by taking
care of all of the special operations that are re-
quired to update the memory contents. The end of
a Program or Erase operation can be detected and
any error conditions identified in the Status Regis-
ter. The command set required to control the
memory is consistent with JEDEC standards.
The device supports synchronous burst read and
asynchronous read from all blocks of the memory
array; at power-up the device is configured for
asynchronous read. In asynchronous mode an
Address Latch input can be used to latch address-
es in Latch Controlled mode. In synchronous burst
mode, data is output on each clock cycle at fre-
quencies of up to 56MHz.
The Write Buffer allows the microprocessor to pro-
gram from 1 to 16 Words in parallel, both speeding
up the programming and freeing up the micropro-
cessor to perform other work. A Word Program
command is available to program a single Word.
Erase can be suspended in order to perform either
Read or Program in any other block and then re-
sumed. Program can be suspended to Read data
in any other block and then resumed. Each block
can be programmed and erased over 100,000 cy-
cles.
The M58LW032C has several security features to
increase data protection.
I
Block Protection, where each block can be
individually protected against program or erase
operations. All blocks are protected during
power-up. The protection of the blocks is non-
volatile; after power-up the protection status of
each block is restored to the state when power
was last removed.
I
Program Erase Enable input V
PEN
, program or
erase operations are not possible when the
Program Erase Enable input V
PEN
is low.
I
Smart Protection, which allows protected blocks
to be permanently locked. This feature is not
described in the datasheet for security reasons.
Please contact STMicroelectronics for further
details.
I
128 bit Protection Register, divided into two 64
bit segments: the first contains a unique device
number written by ST, the second is user
programmable.
The
segment can be protected.
The Reset/Power-Down pin is used to apply a
Hardware Reset to the memory and to set the de-
vice in power-down mode.
The device features an Auto Low Power mode. If
the bus becomes inactive during Asynchronous
Read operations, the device automatically enters
Auto Low Power mode. In this mode the power
consumption is reduced to the Auto Low Power
supply current.
The STS signal is an open drain output that can be
used to identify the Program/Erase Controller sta-
tus. It can be configured in two modes: Ready/
Busy mode where a static signal indicates the sta-
tus of the P/E.C, and Status mode where a pulsing
signal indicates the end of a Program or Block
Erase operation. In Status mode it can be used as
a system interrupt signal, useful for saving CPU
time.
The memory is available in TSOP56 (14 x 20 mm)
and TBGA64 (10 x 13mm, 1mm pitch) packages.
user
programmable
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LW032C90ZA1E | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C90N6T | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C90N6F | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C90N6E | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C90N6 | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW032C90ZA1T | 功能描述:閃存 4Mx8 or 2Mx16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58LW032C90ZA6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C90ZA6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C90ZA6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C90ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
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