參數(shù)資料
型號: M58LW032C90ZA1E
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
中文描述: 32兆位的2Mb x16插槽,統(tǒng)一座,突發(fā)3V電源快閃記憶體
文件頁數(shù): 23/61頁
文件大?。?/td> 845K
代理商: M58LW032C90ZA1E
23/61
M58LW032C
Table 5. Commands
Note: 1.
X Don’t Care; RA Read Address, RD Read Data, IDA Identifier Address, IDD Identifier Data, SRD Status Register Data, PA Program
Address; PD Program Data, QA Query Address, QD Query Data, BA Any address in the Block, BCR Configuration Register value,
CC Configuration Code.
2. Base Address, refer to Figure 8 and Table 8 for more information.
3. For Identifier addresses and data refer to table 7, Read Electronic Signature.
4. For Query Address and Data refer to Appendix B, CFI.
Command
C
Bus Operations
1st Cycle
2nd Cycle
Subsequent
Final
Op.
Addr. Data
Op.
Addr.
Data
Op.
Addr. Data Op.
Addr. Data
Read Memory Array
2
Write
X
FFh
Read
RA
RD
Read Electronic Signature
2
Write
X
90h
Read
IDA
(3)
IDD
(3)
Read Status Register
2
Write
X
70h
Read
X
SRD
Read Query
2
Write
X
98h
Read
QA
(4)
QD
(4)
Clear Status Register
1
Write
X
50h
Block Erase
2
Write
X
20h
Write
BA
D0
Word Program
2
Write
X
40h
10h
Write
PA
PD
Write to Buffer and
Program
4 + N Write
BA
E8h
Write
BA
N
Write
PA
PD Write
X
D0h
Program/Erase Suspend
1
Write
X
B0h
Program/Erase Resume
1
Write
X
D0h
Set Configuration Register
2
Write
X
60h
Write
BCR
03h
Block Protect
2
Write
X
60h
Write
BA
01h
Blocks Unprotect
2
Write
X
60h
Write
X
D0h
Protection Register
Program
2
Write
X
C0h
Write
PRA
PRD
Configure STS command
2
Write
X
B8h
Write
X
CC
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