參數(shù)資料
型號(hào): M58LW032C110ZA6T
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
中文描述: 32兆位的2Mb x16插槽,統(tǒng)一座,突發(fā)3V電源快閃記憶體
文件頁數(shù): 1/61頁
文件大?。?/td> 845K
代理商: M58LW032C110ZA6T
1/61
April 2003
M58LW032C
32 Mbit (2Mb x16, Uniform Block, Burst)
3V Supply Flash Memory
FEATURES SUMMARY
I
WIDE x16 DATA BUS for HIGH BANDWIDTH
I
SUPPLY VOLTAGE
– V
DD
= 2.7 to 3.6V core supply voltage for Pro-
gram, Erase and Read operations
– V
DDQ
= 1.8 to V
DD
for I/O Buffers
I
SYNCHRONOUS/ASYNCHRONOUS READ
– Synchronous Burst read
– Asynchronous Random Read
– Asynchronous Address Latch Controlled
Read
– Page Read
I
ACCESS TIME
– Synchronous Burst Read up to 56MHz
– Asynchronous Page Mode Read 90/25ns,
110/25ns
– Random Read 90ns, 110ns
I
PROGRAMMING TIME
– 16 Word Write Buffer
– 12μs Word effective programming time
I
32 UNIFORM 64 KWord MEMORY BLOCKS
I
ENHANCED SECURITY
– Block Protection/ Unprotection
– Smart Protection: irreversible block locking
system
– V
PEN
signal for Program Erase Enable
– 128 bit Protection Register with 64 bit Unique
Code in OTP area
I
PROGRAM and ERASE SUSPEND
I
COMMON FLASH INTERFACE
I
100,000 PROGRAM/ERASE CYCLES per
BLOCK
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code M58LW032C : 8822h
Figure 1. Packages
TSOP56 (N)
14 x 20 mm
TBGA64 (ZA)
10 x 13 mm
TBGA
相關(guān)PDF資料
PDF描述
M58LW032C110ZA6F 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
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M58LW032D110ZA1T 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory
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