參數(shù)資料
型號: M58LW032C110ZA6
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
中文描述: 32兆位的2Mb x16插槽,統(tǒng)一座,突發(fā)3V電源快閃記憶體
文件頁數(shù): 31/61頁
文件大?。?/td> 845K
代理商: M58LW032C110ZA6
31/61
M58LW032C
Table 14. DC Characteristics
Symbol
Parameter
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
V
IN
V
DDQ
±1
μA
I
LO
Output Leakage Current
0V
V
OUT
V
DDQ
±5
μA
I
DD
Supply Current (Random Read)
E = V
IL
, G = V
IH
, f
add
= 6MHz
20
mA
I
DDB
Supply Current (Burst Read)
E = V
IL
, G = V
IH
, f
clock
= 50MHz
30
mA
I
DD1
Supply Current (Standby)
E = V
IH
, RP = V
IH
40
μ
A
I
DD5
Supply Current (Auto Low-Power)
E = V
IL
, RP = V
IH
40
μ
A
I
DD2
Supply Current (Reset/Power-Down)
RP = V
IL
40
μA
I
DD3
Supply Current (Program or Erase,
Block Protect, Block Unprotect)
Program or Erase operation in
progress
30
mA
I
DD4
Supply Current
(Erase/Program Suspend)
E = V
IH
40
μA
V
IL
Input Low Voltage
–0.5
V
DDQ
x 0.3
V
V
IH
Input High Voltage
V
DDQ
x 0.7
V
DDQ
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 100μA
0.2
V
V
OH
Output High Voltage
I
OH
= –100μA
V
DDQ
–0.2
V
V
LKO
V
DD
Supply Voltage (Erase and
Program lockout)
2
V
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