參數(shù)資料
型號(hào)： M58LW032C110ZA1
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
中文描述： 32兆位的2Mb x16插槽，統(tǒng)一座，突發(fā)3V電源快閃記憶體
文件頁(yè)數(shù)： 49/61頁(yè)
文件大?。?/td> 845K
代理商： M58LW032C110ZA1
49/61
M58LW032C
Table 31. Extended Query information
Note: 1. Bit7 to bit4 are coded in Hexadecimal and scaled in Volt while bit3 to bit0 are in Binary Code Decimal and scaled in mV.
Address
offset
Address
A21-A2
Data (Hex)
x16 Bus Width
Description
(P)h
31h
50h
"P"
Query ASCII string - Extended Table
(P+1)h
32h
52h
"R"
(P+2)h
33h
49h
"I"
(P+3)h
34h
31h
Major version number
(P+4)h
35h
31h
Minor version number
(P+5)h
36h
CEh
Optional Feature: (1=yes, 0=no)
bit0, Chip Erase Supported (0=no)
bit1, Suspend Erase Supported (1=yes)
bit2, Suspend Program Supported (1=yes)
bit3, Protect/UnProtect Supported (1=yes)
bit4, Queue Erase Supported (0=no)
bit5, Instant Individual Block locking (0=no)
bit6, Protection bits supported (1=yes)
bit7, Page Read supported (1=yes)
bit8, Synchronous Read supported (1=yes)
bits 9 to 31 reserved for future use
(P+6)h
37h
01h
(P+7)h
38h
00h
(P+8)h
39h
00h
(P+9)h
3Ah
01h
Function allowed after Suspend:
Program allowed after Erase Suspend (1=yes)
Bit 7-1 reserved for future use
(P+A)h
3Bh
01h
Block Status Register
bit0, Block Protect Bit status active (1=yes)
bit1, Block Lock-Down Bit status active (not available)
bits 2 to 15 reserved for future use
(P+B)h
3Ch
00h
(P+C)h
3Dh
33h
V
DD
OPTIMUM Program/Erase voltage conditions
(P+D)h
3Eh
00h
V
PP
OPTIMUM Program/Erase voltage conditions
(P+E)h
3Fh
01h
OTP protection: No. of protection register fields
(P+F)h
40h
80h
Protection Register’s start address, least significant bits
(P+10)h
41h
00h
Protection Register’s start address, most significant bits
(P+11)h
42h
03h
n where 2
n
is number of factory reprogrammed bytes
(P+12)h
43h
03h
n where 2
n
is number
user programmable bytes
(P+13)h
44h
03h
Page Read: 2
n
Bytes (n = bits 0-7)
(P+14)h
45h
03h
Synchronous mode configuration fields
(P+15)h
46h
01h
n where 2
n+1
is the number of Words for the burst Length = 4
(P+16)h
47h
02h
n where 2
n+1
is the number of Words for the burst Length = 8
(P+17)h
48h
07h
Burst Continuous
相關(guān)PDF資料
PDF描述
M58LW032C110ZA1E 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032C110ZA1F 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032C110ZA1T 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032C110ZA6 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032C110ZA6E 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LW032C110ZA1E 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032C110ZA1F 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032C110ZA1T 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032C110ZA6 功能描述:閃存 4Mx8 or 2Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58LW032C110ZA6E 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
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