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參數(shù)資料
| 型號(hào)： | M57925L |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HYBRID IC FOR DRIVING TRANSISTOR MODULES |
| 中文描述： | 混合集成電路的驅(qū)動(dòng)晶體管模塊 |
| 文件頁(yè)數(shù)： | 5/5頁(yè) |
| 文件大?。?/td> | 50K |
| 代理商： | M57925L |
Feb.1999
MITSUBISHI HYBRID ICs
M57925L
HYBRID IC FOR DRIVING TRANSISTOR MODULES
Typical application circuit
M57925L
+5V
SINK 12mA
V
IN
1
2
3
4
5
6
7
8
V
EE
+
R
2
R
ext
R
1
V
CC
C
1
+
+
C
2
V
O
I
O
I
C
1/2QM50DY etc.
V
IN
0
V
I
t
t
t
–I
O
0
I
OH(I
B1
)
I
OLP(I
B2
)
V
OH
V
O
0
V
OL
Z
D
LOAD
input
DRIVER TTL etc.
EXPLANATION OF FUNCTION
(cf. Fig. 2, 3, 4, and 5)
(1) With low input level (V
in
=0 ~ 1V)
Tr1 ...... OFF, Tr2 ...... ON
The base terminal of transistor module is reverse biased with re-
spect to its emitter by reverse power supply V
EE
.
(2) With high input level (V
in
=4 ~ 5V)
Tr1 ...... ON, Tr2 ...... OFF
The base terminal of transistor module is forward biased and
drived by the current I
OH
through the resistor Rext.
Note:
I
OH
and I
OLP
correspond to base forward current I
B1
and base reverse current I
B2
of the transistor module
to be driven respectively.
(3) With low input level (V
in
=0 ~ 1V)
Tr1 ...... OFF, Tr2 ...... ON
The base terminal of transistor module is reverse biased as
stated in (1) after flowing reverse recovery pulse current I
OLP
. The
steady reverse base current is limited by the internal base-emit-
ter resistor R
BE
of the transistor module.
Typical operating waveform
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