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參數(shù)資料
| 型號： | M54567P |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
| 中文描述： | 4單位1.5A的達林頓晶體管陣列鉗位二極管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 81K |
| 代理商： | M54567P |
Aug. 1999
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54567P/FP
4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54567P and M54567FP are four-circuit Darlington transis-
tor arrays with clamping diodes. The circuits are made of
PNP and NPN transistors. Both the semiconductor inte-
grated circuits perform high-current driving with extremely
low input-current supply.
FEATURES
á
High breakdown voltage (BV
CEO
≥
50V)
á
High-current driving (Ic(max) = 1.5A)
á
With clamping diodes
á
Driving available with NMOS IC output
á
Wide operating temperature range (Ta = –20 to +75
°
C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and power amplification
FUNCTION
The M54567P and M54567FP each have four circuits, which
are made of PNP transistors and NPN Darlington transistors.
The input has 8k
, and a spike-killer clamping diode is pro-
vided between the output pin (collector) and COM pin. All
output transistor emitters are connected to the GND pin.
Collector current is 1.5A maximum. The maximum collector-
emitter voltage is 50V.
The M54567FP is enclosed in a molded small flat package,
enabling space-saving design.
CIRCUIT DIAGRAM
V
V
A
V
V
W
°
C
°
C
10
–0.5 ~ +50
1.5
–0.5 ~ +30
50
1.5
1.0
1.92(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
I
F
A
Ratings
Unit
Symbol
V
CC
V
CEO
I
C
V
I
V
R
Parameter
Conditions
Supply voltage
Collector-emitter voltage
Collector current
Input voltage
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Pulse Width
≤
10ms, Duty Cycle
≤
5%
Pulse Width
≤
100ms, Duty Cycle
≤
5%
Ta = 25
°
C, when mounted on board
P
d
T
opr
T
stg
Clamping diode forward current
ABSOLUTE MAXIMUM RATINGS
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
22K
2K
5.5K
3K
8K
GND
COM
V
CC
INPUT
OUTPUT
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
The four circuits share the COM and GND.
1
O1
←
IN1
→
IN2
→
O2
←
V
CC
COM COMMON
V
CC
COM COMMON
GND
GND
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
→
O3
←
IN3
←
IN4
→
O4
OUTPUT4
INPUT4
INPUT3
OUTPUT3
OUTPUT1
INPUT1
INPUT2
OUTPUT2
16P4(P)
Package type 16P2N-A(FP)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M54569P | 8 UNIT 30MA TRANSISTOR ARRAY |
| M54577P | 7 UNIT 30MA TRANSISTOR ARRAY |
| M54577FP | 7 UNIT 30MA TRANSISTOR ARRAY |
| M54580P | 7 UNIT 150MA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY |
| M54583 | 8 UNIT 400MA DARLINGTON TRANSISTOR ARRAY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M54569P | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8 UNIT 30MA TRANSISTOR ARRAY |
| M54577FP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7 UNIT 30MA TRANSISTOR ARRAY |
| M54577P | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7 UNIT 30MA TRANSISTOR ARRAY |
| M54578P | 制造商:Mitsubishi Electric 功能描述:54578P |
| M54580P | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7 UNIT 150MA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY |
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