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參數(shù)資料
| 型號： | M54534P |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE |
| 中文描述： | 6座三二○毫安晶體管陣列鉗位二極管和濾波 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 74K |
| 代理商： | M54534P |
Aug.1999
20k
STB
STROBE INPUT
2k
380
1.6k
INPUT
COM
V
CC
OUTPUT
GND
The six circuits share the STB, COM, V
CC
, GND.
The diodes shown by broken line are parasite diodes and must not
be use.
Unit :
1
STROBE INPUT STB
→
INPUT
OUTPUT
IN1
→
IN2
→
IN3
→
IN4
→
IN5
→
IN6
→
COM COMMON
GND
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
→
O6
→
O5
→
O4
→
O3
→
O2
→
O1
V
CC
16P4(P)
Outline 16P2N-A(FP)
PIN CONFIGURATION (TOP VIEW)
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54534P/FP
6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE
DESCRIPTION
M54534P and M54534FP are six-circuit transistor arrays.
The circuits are made of NPN transistors. Both the semicon-
ductor integrated circuits perform high-current driving with
extremely low input-current supply.
FEATURES
G
Medium breakdown voltage (BV
CEO
≥
20V)
G
High-current driving (Ic(max) =320mA)
G
With clamping diodes
G
Wide input voltage range (V
I
= –25 to +20V)
G
Wide operating temperature range (Ta = –20 to +75
°
C)
G
With strobe input
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps).
FUNCTION
The M54534P and M54534FP each have six circuits consist-
ing of NPN transistors. Each input has a diode and 1.6k
esistor in series. Each input is connected, and each output
is connected spike-killer clamping diode, emitters of each
transistor is connected to GND (pin 8), strobe input is con-
nected to (pin 1), clamping diode is connected COM pin (pin
9) and V
CC
is connected to the pin 16 in common.
The collector current is 320mA maximum. Collector-emitter
supply voltage is 20V maximum.
M54534FP is enclosed in a molded small flat package, en-
abling space-saving design.
CIRCUIT SCHEMATIC (EACH CIRCUIT)
Supply voltage
Collector-emitter voltage
Collector current
Input voltage
Strobe input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
V
V
mA
V
V
mA
V
W
°
C
°
C
10
–0.5 ~ +20
320
–25 ~ +20
–0.5~ +20
320
20
1.47/1.00
–20 ~ +75
–55 ~ +125
V
CC
V
CEO
I
C
V
I
V
(STB)
I
F
V
R
P
d
T
opr
T
stg
Ratings
Symbol
Parameter
Conditions
Unit
ABSOLUTE MAXIMUM RATINGS
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
Output, H
Current per circuit output, L
Ta = 25
°
C, when mounted on board
相關(guān)PDF資料 |
PDF描述 |
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| M54537P | 7-Unit 350mA Transistor array |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M54537P | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7-Unit 350mA Transistor array |
| M54538P | 制造商:Mitsubishi Electric 功能描述:54538P |
| M54539P | 制造商:Panasonic Industrial Company 功能描述:IC |
| M54542L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:BI-DIRECTIONAL MOTOR DRIVER |
| M54543AFP | 制造商:Panasonic Industrial Company 功能描述:IC |
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