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參數(shù)資料
| 型號(hào)： | M54526FP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
| 中文描述： | 7個(gè)單位500mA的達(dá)林頓晶體管陣列鉗位二極管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 82K |
| 代理商： | M54526FP |
Aug. 1999
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54526P/FP
7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54526P and M54526FP are seven-circuit Darlington tran-
sistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
FEATURES
á
High breakdown voltage (BV
CEO
≥
50V)
á
High-current driving (Ic(max) = 500mA)
á
With clamping diodes
á
Driving available with PMOS IC output of 8-18V
á
Wide operating temperature range (Ta = –20 to +75
°
C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
FUNCTION
The M54526P and M54526FP each have seven circuits con-
sisting of NPN Darlington transistors. These ICs have resis-
tance of 10.5k
between input transistor bases and input
pins. A spike-killer clamping diode is provided between each
output pin (collector) and COM pin (pin 9). The output tran-
sistor emitters are all connected to the GND pin (pin 8).
The collector current is 500mA maximum. Collector-emitter
supply voltage is 50V maximum.
The M54526FP is enclosed in a molded small flat package,
enabling space-saving design.
CIRCUIT DIAGRAM
V
mA
V
mA
V
W
°
C
°
C
–0.5 ~ +50
500
–0.5 ~ +30
500
50
1.47(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
Ratings
Symbol
V
CEO
I
C
V
I
I
F
V
R
P
d
T
opr
T
stg
Parameter
Conditions
Unit
5K
3K
10.5K
COM
GND
INPUT
OUTPUT
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
The seven circuits share the COM and GND.
ABSOLUTE MAXIMUM RATINGS
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Ta = 25
°
C, when mounted on board
1
IN1
→
IN2
→
IN3
→
IN4
→
IN5
→
IN6
→
IN7
→
→
COM COMMON
GND
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
→
O7
→
O6
→
O5
→
O4
→
O3
→
O2
→
O1
16P4(P)
Package type 16P2N-A(FP)
INPUT
OUTPUT
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| M54526P | 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
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| M54530P | 7 UNIT 400MA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M54526P | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
| M54527P | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:6-UNIT 150mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
| M54528P | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7- UNIT 150MA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
| M54529AP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:S-UNIT 320mA TRANSISTOR ARRAY WITH STORE |
| M54529P | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:S-UNIT 320mA TRANSISTOR ARRAY WITH STORE |
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