參數(shù)資料
型號(hào): M52S16161A
廠商: Elite Semiconductor Memory Technology Inc.
英文描述: 512K x 16Bit x 2Banks Synchronous DRAM
中文描述: 為512k × 16Bit的X 2Banks同步DRAM
文件頁(yè)數(shù): 22/29頁(yè)
文件大?。?/td> 770K
代理商: M52S16161A
ES MT
Write Interrupted by Precharge Command & Write Burst stop Cycle @ Burst Length =Full page
M52S16161A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2007
Revision
:
1.5
22/29
*Note:
1. Burst can’t end in full page mode, so auto precharge can’t issue.
2.Data-in at the cycle of interrupted by precharge can not be written into the corresponding memory cell. It is defined by
AC parameter of t
RDL
.
DQM at write interrupted by precharge command is needed to prevent invalid write.
Input data after Row precharge cycle will be masked internally.
3.Burst stop is valid at every burst length.
C L O C K
C K E
A D D R
DQ
DQ M
A10/AP
RAa
CAa
CAb
RAa
DAa0 DAa1
DAb1
DAb0
DAb2
Row Active
(A- Bank)
W rite
(A- Bank)
Burst Stop
W rite
(A-Bank)
:Don't Car e
HIGH
DAa2 DAa3 DAa4
DAb3 DAb4 DAb5
Precharge
(A- Bank)
t
B D L
t
RD L
* Not e 2
CS
RAS
CAS
W E
BA
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
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M52S16161A_09 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Mobile Synchronous DRAM
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M52S16161A-10TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM
M52S16161A-8BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Mobile Synchronous DRAM
M52S16161A-8TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Mobile Synchronous DRAM