參數資料
型號： M52S16161A-8BG
廠商： ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類： DRAM
英文描述： 512K x 16Bit x 2Banks Synchronous DRAM
中文描述： 1M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA60
封裝： 6.4 X 10.10 MM, 0.65 MM PITCH, LEAD FREE, VFBGA-60
文件頁數： 26/29頁
文件大?。?/td> 770K
代理商： M52S16161A-8BG
ES MT
Mode Register Set Cycle
M52S16161A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2007
Revision
:
1.5
26/29
Auto Refresh Cycle
*Both banks precharge should be completed before Mode Register Set cycle and auto refresh cycle.
MODE REGISTER SET CYCLE
*Note: 1.CS ,RAS ,CAS &
WE
activation at the same clock cycle with address key will set internal mode register.
2.Minimum 2 clock cycles should be met before new RAS activation.
3.Please refer to Mode Register Set table.
C L O C K
C K E
A D D R
Key
:Don't Care
HIGH
CS
RAS
CAS
HIGH
*Note3
Ra
*Note1
DQ
H i - Z
DQ M
1 2 3 4 5 6 0 1 2 3 4 5 6 7 8 9 10
H i - Z
*Note2
t
R C
MR S
New Command
Auto Refresh
New Command
W E
0
相關PDF資料
PDF描述
M52S16161A-8TG 512K x 16Bit x 2Banks Synchronous DRAM
M52S32162A 1M x 16Bit x 2Banks Synchronous DRAM
M52S32162A-10BG 1M x 16Bit x 2Banks Synchronous DRAM
M52S32162A-10TG 1M x 16Bit x 2Banks Synchronous DRAM
M52S32162A-7.5BG 1M x 16Bit x 2Banks Synchronous DRAM
相關代理商/技術參數
參數描述
M52S16161A-8TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Mobile Synchronous DRAM
M52S32162A 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Synchronous DRAM
M52S32162A_08 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Mobile Synchronous DRAM
M52S32162A_1 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Synchronous DRAM
M52S32162A-10BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Synchronous DRAM
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