參數(shù)資料
型號(hào)： M52S128168A-10BG
廠商： ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類(lèi)： DRAM
英文描述： 1M x 16 Bit x 4 Banks Synchronous DRAM
中文描述： 8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
封裝： 8 X 8 MM, LEAD FREE, FBGA-54
文件頁(yè)數(shù)： 16/47頁(yè)
文件大小： 1213K
代理商： M52S128168A-10BG
ES MT
Precharge command
(CS ,RAS ,
WE
= Low,CAS = High )
This command begins precharge operation of the bank selected by BA1 and BA0
(BS). When A10 is High, all banks are precharged, regardless of BA1 and BA0.
When A10 is Low, only the bank selected by BA1 and BA0 is precharged.
After this command, the DRAM can’t accept the activate command to the
precharging bank during t
RP
(precharge to activate command period).
This command corresponds to a conventional DRAM’s RAS rising.
Write command
(CS ,CAS ,
WE
= Low,RAS = High)
If the mode register is in the burst write mode, this command sets the burst start
address given by the column address to begin the burst write operation. The first
write data in burst can be input with this command with subsequent data on following
clocks.
Read command
(CS ,CAS = Low,RAS ,
WE
= High)
Read data is available after CAS latency requirements have been met.
This command sets the burst start address given by the column address.
Preliminary
M52S128168A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.0
Publication Date
:
May. 2007
16/47
相關(guān)PDF資料
PDF描述
M52S128168A-10TG 1M x 16 Bit x 4 Banks Synchronous DRAM
M52S128168A-7.5BG 1M x 16 Bit x 4 Banks Synchronous DRAM
M52S128168A-7.5TG 1M x 16 Bit x 4 Banks Synchronous DRAM
M52S16161A 512K x 16Bit x 2Banks Synchronous DRAM
M52S16161A-10BG 512K x 16Bit x 2Banks Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M52S128168A-10TG 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM 128MB 2.5V 100MHZ TSOPII54
M52S128168A-7.5BG 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM 128MB 2.5V 133MHZ FBGA54 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM, 128MB, 2.5V, 133MHZ, FBGA54 制造商:ELITE SEMICONDUCTOR 功能描述:DRAM IC; Page Size:128MB; Memory Case Style:FBGA; No. of Pins:54; IC Interface Type:Parallel; Operating Temperature Min:0C; Operating Temperature Max:70C; Filter Terminals:Surface Mount; Frequency:133MHz; Interface Type:Parallel ;RoHS Compliant: Yes
M52S128168A-7.5TG 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM 128MB 2.5V 133MHZ TSOPII54
M52S128168A-7BG 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
M52S128168A-7TG 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
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