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參數(shù)資料
| 型號： | M52D128168A-10BG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| 中文描述： | 8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 |
| 封裝： | 8 X 8 MM, LEAD FREE, FBGA-54 |
| 文件頁數(shù)： | 15/47頁 |
| 文件大小： | 1209K |
| 代理商： | M52D128168A-10BG |
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ES MT
Preliminary
M52D128168A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.0
Publication Date
:
May. 2007
15/47
COMMANDS
Mode register set command
(
CS
,
RAS
,
CAS
,
WE
,
BA1, BA0
= Low)
The DRAM has a mode register that defines how the device operates. In this
command, A0 through BA0 are the data input pins. After power on, the mode register
set command must be executed to initialize the device.
The mode register can be set only when all banks are in idle state. During 2CLK
(t
MRD
) following this command, the DRAM cannot accept any other commands.
Extended Mode register set command
(CS ,RAS ,CAS ,
WE
, BA0 = Low ; BA1= High)
The DRAM has a extended mode register that defines how to set PASR, TCSR,
DS.
Activate command
(CS ,RAS = Low,CAS ,
WE
= High)
The DRAM has four banks, each with 4,096 rows.
This command activates the bank selected by BA1 and BA0 (BS) and a row
address selected by A0 through A11.
This command corresponds to a conventional DRAM’s RAS falling.
相關PDF資料 |
PDF描述 |
|---|---|
| M52D128168A-10TG | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| M52D128168A-7.5BG | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| M52D128168A-7.5TG | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| M52D16161A | 512K x 16Bit x 2Banks Synchronous DRAM |
| M52D16161A-10BG | 512K x 16Bit x 2Banks Synchronous DRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M52D128168A-10BIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM |
| M52D128168A-10TG | 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM 128MB 1.8V 100MHZ TSOPII54 |
| M52D128168A-10TIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM |
| M52D128168A-7.5BG | 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM 128MB 1.8V 133MHZ FBGA54 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM, 128MB, 1.8V, 133MHZ, FBGA54 制造商:ELITE SEMICONDUCTOR 功能描述:IC, SDRAM, 128MBIT, 133MHZ, FBGA-54; Memory Type:DRAM - Sychronous; Memory Configuration:2M x 16; Page Size:128MB; Memory Case Style:FBGA; No. of Pins:54; IC Interface Type:Parallel; Operating Temperature Min:0C; Frequency:133MHz ;RoHS Compliant: Yes |
| M52D128168A-7.5BIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM |
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