
MITSUBISHI ICs (AV COMMON)
M52393P/FP
EDTV2 IDENTIFICATION SIGNAL DETECTOR
2
ABSOLUTE MAXIMUM RATINGS
(Ta=25
°
C, Measured on a standard board, unless otherwise noted)
( ) indicate FP values.
ELECTRICAL CHARACTERISTICS
SPECIFICATIONS
(Ta=25
°
C, V
CC
=5.0V, unless otherwise noted)
Symbol
V
CC
P
d
T
opr
T
stg
K
θ
Parameter
Ratings
6
1400 (980)
-20 to 75
-40 to 125
14 (9.8)
Unit
V
mW
°
C
°
C
mW/
Supply voltage
Power dissipation
Operating temperature
Storage temperature
Thermal derating (Ta
≥
25
°
C)
°
C
Symbol
Parameter
Test conditions
Limits
Unit
Input
Input
signal
0V
F1
Output
Output signal
Remarks
Min.
Typ.
Max.
I
CC1
Circuit current1
SG15
SG11
16
DC
Current
21
28
35
mA
V15
Clamp voltage
SG15
SG11
S1
F2
AC15
Sync chip
voltage
2.2
2.5
2.8
V
G1
14dB Amp gain
SG15
SG11
S2
F1
AC1
12
14
16
dB
TRP1
TRAP gain1
SG15
SG11
T1
F1
AC1
10.3
13.3
16.3
dB
TRP2
TRAP gain2
SG15
SG11
T2
F1
AC1
-12.0
-6.0
dB
TRP3
TRAP gain3
SG15
SG11
T3
F1
AC1
-15.5
-9.5
dB
TRP4
TRAP gain4
SG15
SG11
T4
F1
AC1
4.7
10.7
16.7
dB
SSD
Sync sepa. delay
SG15
SG11
S1
F1
12
Delay
0.7
1.0
1.3
μ
s
SSM
Sync sepa. delay at 30%
SG15
SG11
S3
F1
12
Delay
SSM=SSD-M
0
0.5
μ
s
VSD
V sepa. delay
SG15
SG11
S1
F1
12
Delay
38
48
58
μ
s
VC1
CLAMP1 voltage
SG15
SG11
SG15
SG11
SG15
SG11
SG15
SG11
SG15
SG11
SG15
SG11
SG11
SG11
SG11
S1
F3
S1
F3
S1
F1
S1
F1
S1
F1
S1
F1
F1
F1
F1
3
DC
Voltage
2.8
3.1
3.4
V
VC2
CLAMP2 voltage
5
DC
Voltage
2.8
3.1
3.4
V
LDI1
Driving capacity at Hi 1
9
DC
Voltage
4.0
4.2
4.5
V
LDI2
Driving capacity at Hi 2
9
DC
LDI2=LDI1-M
0
0.1
0.5
V
HDI1
Driving capacity at Lo 1
9
DC
Voltage
0
0.1
0.5
V
HDI2
Driving capacity at Lo 2
9
DC
HDI2=M-HDI1
0
0.2
0.5
V
V2
V4
V6
COMP. 1 voltage
COMP. 2 voltage
COMP. 3 voltage
2
4
6
DC
DC
DC
Voltage
Voltage
Voltage
2.2
2.2
2.2
2.5
2.5
2.5
2.8
2.8
2.8
V
V
V
G1=20log
M
286mV
1MHz
T1=20log
M
143mV
2.04MHz
T2=20log
M
143mV
3.58MHz
T3=20log
M
143mV
5MHz
T4=20log
M
143mV
15
12
15
12
15
12
2.5V