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參數(shù)資料
| 型號(hào)： | M50LPW080N5G |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8 Mbit 1Mb x8, Uniform Block 3V Supply Low Pin Count Flash Memory |
| 中文描述： | 8兆1兆× 8，統(tǒng)一座3V電源低引腳數(shù)快閃記憶體 |
| 文件頁數(shù)： | 17/44頁 |
| 文件大小： | 641K |
| 代理商： | M50LPW080N5G |
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M50LPW080
Chip Erase Command.
The Chip Erase Com-
mand can be only used in A/A Mux mode to erase
the entire chip at a time. Erasing should not be at-
tempted when V
PP
is not at V
PPH
. The operation
can also be executed if V
PP
is below V
PPH
, but re-
sult could be uncertain. Two Bus Write operations
are required to issue the command and start the
Program/Erase Controller. Once the command is
issued subsequent Bus Read operations read the
Status Register. See the section on the Status
Register for details on the definitions of the Status
Register bits. During the Chip Erase operation the
memory will only accept the Read Status Register
command. All other commands will be ignored.
Typical Chip Erase times are given in
Table 15.
.
The Chip Erase command sets all of the bits in the
memory to ‘1’. See
Figure 20.
for a suggested
flowchart on using the Chip Erase command.
Block Erase Command.
The Block Erase com-
mand can be used to erase a block. Two Bus Write
operations are required to issue the command; the
second Bus Write cycle latches the block address
in the internal state machine and starts the Pro-
gram/Erase Controller. Once the command is is-
sued subsequent Bus Read operations read the
Status Register. See the section on the Status
Register for details on the definitions of the Status
Register bits.
If the block is protected then the Block Erase oper-
ation will abort, the data in the block will not be
changed and the Status Register will output the er-
ror.
During the Block Erase operation the memory will
only accept the Read Status Register command
and the Program/Erase Suspend command. All
other commands will be ignored. Typical Block
Erase times are given in
Table 15.
.
The Block Erase command sets all of the bits in
the block to ‘1’. All previous data in the block is
lost.
See
Figure 21.
for a suggested flowchart on using
the Block Erase command.
Clear Status Register Command.
The
Status Register command can be used to reset
bits 1, 3, 4 and 5 in the Status Register to ‘0’. One
Bus Write is required to issue the Clear Status
Register command. Once the command is issued
the memory returns to its previous mode, subse-
quent Bus Read operations continue to output the
same data.
Clear
The bits in the Status Register are sticky and do
not automatically return to ‘0’ when a new Program
or Erase command is issued. If an error occurs
then it is essential to clear any error bits in the Sta-
tus Register by issuing the Clear Status Register
command before attempting a new Program or
Erase command.
Program/Erase Suspend Command.
The Pro-
gram/Erase Suspend command can be used to
pause a Program or Block Erase operation. One
Bus Write cycle is required to issue the Program/
Erase Suspend command and pause the Pro-
gram/Erase Controller. Once the command is is-
sued it is necessary to poll the Program/Erase
Controller Status bit to find out when the Program/
Erase Controller has paused; no other commands
will be accepted until the Program/Erase Control-
ler has paused. After the Program/Erase Control-
ler has paused, the memory will continue to output
the Status Register until another command is is-
sued.
During the polling period between issuing the Pro-
gram/Erase Suspend command and the Program/
Erase Controller pausing it is possible for the op-
eration to complete. Once Program/Erase Control-
ler Status bit indicates that the Program/Erase
Controller is no longer active, the Program Sus-
pend Status bit or the Erase Suspend Status bit
can be used to determine if the operation has com-
pleted or is suspended. For timing on the delay be-
tween issuing the Program/Erase Suspend
command and the Program/Erase Controller
pausing see
Table 15.
.
During Program/Erase Suspend the Read Memo-
ry Array, Read Status Register, Read Electronic
Signature and Program/Erase Resume com-
mands will be accepted by the Command Inter-
face. Additionally, if the suspended operation was
Block Erase then the Program command will also
be accepted; only the blocks not being erased may
be read or programmed correctly.
See
Figure 19.
and
Figure 22.
for suggested flow-
charts on using the Program/Erase Suspend com-
mand.
Program/Erase Resume Command.
The
gram/Erase Resume command can be used to re-
start the Program/Erase Controller after a
Program/Erase Suspend has paused it. One Bus
Write cycle is required to issue the Program/Erase
Resume command. Once the command is issued
subsequent Bus Read operations read the Status
Register.
Pro-
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PDF描述 |
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| M50LPW080N5TG | 8 Mbit 1Mb x8, Uniform Block 3V Supply Low Pin Count Flash Memory |
| M50LPW080K1T | 8 Mbit 1Mb x8, Uniform Block 3V Supply Low Pin Count Flash Memory |
| M50LPW080K1TG | 8 Mbit 1Mb x8, Uniform Block 3V Supply Low Pin Count Flash Memory |
| M50LPW080K5 | 8 Mbit 1Mb x8, Uniform Block 3V Supply Low Pin Count Flash Memory |
| M50LPW080K1G | 8 Mbit 1Mb x8, Uniform Block 3V Supply Low Pin Count Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M50LPW080N5T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Uniform Block 3V Supply Low Pin Count Flash Memory |
| M50LPW080N5TG | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Uniform Block 3V Supply Low Pin Count Flash Memory |
| M50LPW116 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Boot Block 3V Supply Low Pin Count Flash Memory |
| M50LPW116N | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Boot Block 3V Supply Low Pin Count Flash Memory |
| M50LPW116N1 | 功能描述:閃存 3.0V 16M (2Mx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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