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參數(shù)資料
| 型號： | M50LPW040N |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4 Mbit 512Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory |
| 中文描述： | 4兆位512KB的× 8，統(tǒng)一座3V電源低引腳數(shù)快閃記憶體 |
| 文件頁數(shù)： | 2/36頁 |
| 文件大?。?/td> | 272K |
| 代理商： | M50LPW040N |
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M50LPW040
2/36
Figure 2. Logic Diagram (A/A Mux Interface)
AI05436
11
RC
DQ0-DQ7
VCC
M50LPW040
IC
VSS
8
G
W
RB
RP
A0-A10
VPP
DESCRIPTION
The M50LPW040 is a 4 Mbit (512Kb x8) non-
volatile memory that can be read, erased and
reprogrammed.
These
performed using a single low voltage (3.0 to 3.6V)
supply. For fast programming and fast erasing in
production lines an optional 12V power supply can
be used to reduce the programming and the
erasing times.
The memory is divided into blocks that can be
erased independently so it is possible to preserve
valid data while old data is erased. Blocks can be
protected individually to prevent accidental
Program or Erase commands from modifying the
memory. Program and Erase commands are
written to the Command Interface of the memory.
An on-chip Program/Erase Controller simplifies
the process of programming or erasing the
memory by taking care of all of the special
operations that are required to update the memory
contents. The end of a program or erase operation
can be detected and any error conditions
identified. The command set required to control
the memory is consistent with JEDEC standards.
Two different bus interfaces are supported by the
memory. The primary interface is the Low Pin
Count (or LPC) Standard Interface. This has been
designed to remove the need for the ISA bus in
operations
can
be
Figure 3. TSOP Connections
AI05437
A1
A2
A0
DQ0
A7
A6
A5
A4
A3
A9
A8
W
G
RB
VSS
VCC
DQ7
DQ6
DQ5
DQ4
VCC
DQ1
DQ2
DQ3
A
A
ID1
ID2
RFU
LAD1
LAD0
ID0
LAD2
GPI3
GPI2
GPI1
TBL
GPI0
WP
NC
VCC
LFRAME
INIT
RFU
NC
NC
NC
IC (VIL)
RFU
RFU
GPI4
NC
CLK
VCC
NC
VSS
VSS
RFU
RFU
LAD3
VCC
RP
NC
NC
VPP
M50LPW040
10
11
1
20
21
30
31
40
VSS
NC
NC
A10
NC
NC
NC
IC (VIH)
NC
NC
RC
VCC
RP
VPP
NC
VSS
VSS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M50LPW040N1T | 4 Mbit 512Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory |
| M50LPW040N5T | 4 Mbit 512Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory |
| M52D128168A | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| M52D128168A-10BG | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| M52D128168A-10TG | 2M x 16 Bit x 4 Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M50LPW040N1 | 功能描述:閃存 3.6V 4M (512Kx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M50LPW040N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory |
| M50LPW040N5G | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL/SERL 3V/3.3V 4MBIT 512KX8 30NS 40TSOP - Bulk |
| M50LPW040N5T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory |
| M50LPW041 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory |
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