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參數(shù)資料
| 型號： | M50FW002K |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 2 Mbit 256Kb x8, Boot Block 3V Supply Firmware Hub Flash Memory |
| 中文描述： | 2兆位的256Kb × 8，啟動(dòng)塊3V電源閃存固件集線器 |
| 文件頁數(shù)： | 13/39頁 |
| 文件大?。?/td> | 254K |
| 代理商： | M50FW002K |
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M50FW002
COMMAND INTERFACE
All Bus Write operations to the memory are
interpreted
by
the
Commands consist of one or more sequential Bus
Write operations.
After power-up or a Reset operation the memory
enters Read mode.
The commands are summarized in Table 8,
Commands. Refer to Table 8 in conjunction with
the text descriptions below.
Read Memory Array Command.
The Read Mem-
ory Array command returns the memory to its
Read mode where it behaves like a ROM or
EPROM. One Bus Write cycle is required to issue
the Read Memory Array command and return the
memory to Read mode. Once the command is is-
sued the memory remains in Read mode until an-
other command is issued. From Read mode Bus
Read operations will access the memory array.
While the Program/Erase Controller is executing a
Program or Erase operation the memory will not
accept the Read Memory Array command until the
operation completes.
Read Status Register Command.
The Read Sta-
tus Register command is used to read the Status
Register. One Bus Write cycle is required to issue
the Read Status Register command. Once the
command is issued subsequent Bus Read opera-
tions read the Status Register until another com-
mand is issued. See the section on the Status
Register for details on the definitions of the Status
Register bits.
Read Electronic Signature Command.
The Read
Electronic Signature command is used to read the
Manufacturer Code and the Device Code. One
Bus Write cycle is required to issue the Read
Electronic
Signature
command is issued subsequent Bus Read
operations read the Manufacturer Code or the
Device Code until another command is issued.
After the Read Electronic Signature Command is
issued the Manufacturer Code and Device Code
can be read using Bus Read operations using the
addresses in Table 9.
Command
Interface.
command.
Once
the
Table 9. Read Electronic Signature
Program Command.
The Program command
can be used to program a value to one address in
the memory array at a time. Two Bus Write
operations are required to issue the command; the
second Bus Write cycle latches the address and
data in the internal state machine and starts the
Program/Erase Controller. Once the command is
issued subsequent Bus Read operations read the
Status Register. See the section on the Status
Register for details on the definitions of the Status
Register bits.
If the address falls in a protected block then the
Program operation will abort, the data in the
memory array will not be changed and the Status
Register will output the error.
During the Program operation the memory will
only accept the Read Status Register command
and the Program/Erase Suspend command. All
other commands will be ignored. Typical Program
times are given in Table 22.
Note that the Program command cannot change a
bit set at ‘0’ back to ‘1’ and attempting to do so will
not cause any modification on its value. One of the
Erase commands must be used to set all of the
bits in the block to ‘1’.
See Figure 14, Program Flowchart and Pseudo
Code, for a suggested flowchart on using the
Program command.
Quadruple Byte Program Command.
The Qua-
druple Byte Program Command can be only used
in A/A Mux mode to program four adjacent bytes
in the memory array at a time. The four bytes must
differ only for the addresses A0 and A1.
Programming should not be attempted when V
PP
is not at V
PPH
. The operation can also be executed
if V
PP
is below V
PPH
, but result could be uncertain.
Five Bus Write operations are required to issue the
command. The second, the third and the fourth
Bus Write cycle latches respectively the address
and data of the first, the second and the third byte
in the internal state machine. The fifth Bus Write
cycle latches the address and data of the fourth
byte in the internal state machine and starts the
Program/Erase Controller. Once the command is
issued subsequent Bus Read operations read the
Status Register. See the section on the Status
Register for details on the definitions of the Status
Register bits.
During the Quadruple Byte Program operation the
memory will only accept the Read Status register
command and the Program/Erase Suspend com-
mand. All other commands will be ignored. Typical
Quadruple Byte Program times are given in Table
22.
Note that the Quadruple Byte Program command
cannot change a bit set to ‘0’ back to ‘1’ and
attempting to do so will not cause any modification
on its value. An Erase command must be used to
set all of the bits in the block to ‘1’.
See Figure 15, Quadruple Byte Program Flow-
chart and Pseudo Code (A/A Mux Interface Only),
Code
Address
Data
Manufacturer Code
00000h
20h
Device Code
00001h
29h
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M50FW002 | 2 Mbit 256Kb x8, Boot Block 3V Supply Firmware Hub Flash Memory |
| M50LPW041K1T | 4 Mbit 512Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory |
| M50LPW041N1T | 4 Mbit 512Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory |
| M50LPW041N | 4 Mbit 512Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory |
| M50LPW041K | 4 Mbit 512Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M50FW002K1 | 功能描述:閃存 3.6V 2M (256Kx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M50FW002K1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block 3V Supply Firmware Hub Flash Memory |
| M50FW002K5T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block 3V Supply Firmware Hub Flash Memory |
| M50FW016 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory |
| M50FW016N | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory |
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