參數(shù)資料
型號(hào)： M50FLW080BNB5P
廠商： 意法半導(dǎo)體
英文描述： 8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
中文描述： 8兆位（13 × 64KB之座3 × 16 × 4KB的部門），3V電源固件集線器/低引腳數(shù)快閃記憶體
文件頁(yè)數(shù)： 26/64頁(yè)
文件大小： 341K
代理商： M50FLW080BNB5P
Command interface
M50FLW080A, M50FLW080B
26/64
4.2
Read Status Register command
The Read Status Register command is used to read the Status Register. One Bus Write
cycle is required to issue the Read Status Register command. Once the command is issued,
subsequent Bus Read operations read the Status Register until another command is issued.
See the section on the Status Register for details on the definitions of the Status Register
bits.
4.3
Read Electronic Signature command
The Read Electronic Signature command is used to read the Manufacturer Code and the
Device Code. One Bus Write cycle is required to issue the Read Electronic Signature
command. Once the command is issued, the Manufacturer Code and Device Code can be
read using conventional Bus Read operations, and the addresses shown in
Table 12
.
Table 12.
The device remains in this mode until another command is issued. That is, subsequent Bus
Read operations continue to read the Manufacturer Code, or the Device Code, and not the
Memory Array.
4.4
Program command
The Program command can be used to program a value to one address in the memory array
at a time.
The Program command works by changing appropriate bits from ‘1’ to ‘0’. (It cannot change
a bit from ‘0’ back to ‘1’. Attempting to do so will not modify the value of the bit. Only the
Erase command can set bits back to ‘1’. and does so for all of the bits in the block.)
Two Bus Write operations are required to issue the Program command. The second Bus
Write cycle latches the address and data, and starts the Program/Erase Controller.
Once the command is issued, subsequent Bus Read operations read the value in the Status
Register. (See the section on the Status Register for details on the definitions of the Status
Register bits.)
If the address falls in a protected block, the Program operation will abort, the data in the
memory array will not be changed, and the Status Register will indicate the error.
During the Program operation, the memory will only accept the Read Status Register
command and the Program/Erase Suspend command. All other commands are ignored.
See
Figure 21
, for a suggested flowchart on using the Program command. Typical Program
times are given in
Table 18
.
Electronic Signature Codes
Code
Address
(1)
1.
A22 should be ‘1’, and the ID lines and upper address bits should be set according to the rules illustrated in
Table 5
,
Table 6
and
Table 8
.
Data
Manufacturer Code
...00000h
20h
Device Code
M50FLW080A
M50FLW080B
...00001h
80h
81h
相關(guān)PDF資料
PDF描述
M50FLW080BNB5TP 8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
M50FLW080AK5P 8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
M50FLW080AK5TP 8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
M50FLW080AN5P 8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
M50FLW080AN5TP 8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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M50FLW080BNB5TG 功能描述:IC FLASH 8MBIT 33MHZ 32TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2
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