參數(shù)資料
型號(hào)： M50FLW080ANB5TP
廠(chǎng)商： 意法半導(dǎo)體
英文描述： 8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
中文描述： 8兆位（13 × 64KB之座3 × 16 × 4KB的部門(mén)），3V電源固件集線(xiàn)器/低引腳數(shù)快閃記憶體
文件頁(yè)數(shù)： 28/64頁(yè)
文件大?。?/td> 341K
代理商： M50FLW080ANB5TP
Command interface
M50FLW080A, M50FLW080B
28/64
4.7
Chip Erase command
The Chip Erase Command erases the entire memory array, setting all of the bits to ‘1’. All
previous data in the memory array are lost. This command, though, is only available under
the A/A Mux interface.
Two Bus Write operations are required to issue the command, and to start the
Program/Erase Controller. Once the command is issued, subsequent Bus Read operations
read the contents of the Status Register. (See the section on the Status Register for details
on the definitions of the Status Register bits.)
Erasing should not be attempted when V
PP
is not at V
PPH
, otherwise the result is uncertain.
During the Chip Erase operation, the memory will only accept the Read Status Register
command. All other commands are ignored.
See
Figure 25
, for a suggested flowchart on using the Chip Erase command. Typical Chip
Erase times are given in
Table 18
.
4.8
Block Erase command
The Block Erase command is used to erase a block, setting all of the bits to ‘1’. All previous
data in the block are lost.
Two Bus Write operations are required to issue the command. The second Bus Write cycle
latches the block address and starts the Program/Erase Controller. Once the command is
issued, subsequent Bus Read operations read the contents of the Status Register. (See the
section on the Status Register for details on the definitions of the Status Register bits.)
If the block, or if at least one sector of the block (for the blocks that are split into sectors), is
protected (FWH/LPC only) then the Block Erase operation will abort, the data in the block
will not be changed, and the Status Register will indicate the error.
During the Block Erase operation the memory will only accept the Read Status Register and
Program/Erase Suspend commands. All other commands are ignored.
See
Figure 26
, for a suggested flowchart on using the Block Erase command. Typical Block
Erase times are given in
Table 18
.
4.9
Sector Erase command
The Sector Erase command is used to erase a Uniform 4-KByte Sector, setting all of the bits
to ‘1’. All previous data in the sector are lost.
Two Bus Write operations are required to issue the command. The second Bus Write cycle
latches the Sector address and starts the Program/Erase Controller. Once the command is
issued, subsequent Bus Read operations read the contents of the Status Register. (See the
section on the Status Register for details on the definitions of the Status Register bits.)
If the Sector is protected (FWH/LPC only), the Sector Erase operation will abort, the data in
the Sector will not be changed, and the Status Register will indicate the error.
During the Sector Erase operation the memory will only accept the Read Status Register
and Program/Erase Suspend commands. All other commands are ignored.
See
Figure 26
, for a suggested flowchart on using the Sector Erase Command. Typical
Sector Erase times are given in
Table 18
.
相關(guān)PDF資料
PDF描述
M50FW080K5P 8 Mbit 1Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory
M50FW080K5TP 8 Mbit 1Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory
M50FW080N5P 8 Mbit 1Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory
M50FW080N5TP 8 Mbit 1Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory
M50FW080NB5P 8 Mbit 1Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M50FLW080AXW21/I 功能描述:閃存 8-bit MCU 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M50FLW080AYW21 功能描述:閃存 SERIAL FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M50FLW080B 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
M50FLW080BK5 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
M50FLW080BK5G 功能描述:閃存 SERIAL FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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