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參數(shù)資料
| 型號： | M50FLW040ANB1TP |
| 廠商： | 意法半導體 |
| 英文描述： | 4 Mbit (5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| 中文描述： | 4兆位（5 × 64KB之座3 × 16 × 4KB的部門）3V電源固件集線器/低引腳數(shù)快閃記憶體 |
| 文件頁數(shù)： | 11/52頁 |
| 文件大?。?/td> | 417K |
| 代理商： | M50FLW040ANB1TP |
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M50FLW040A, M50FLW040B
changed during Program or Erase Suspend, and
care should be taken to avoid this.
Write Protect (WP).
The Write Protect input is
used to prevent the Main Blocks (Blocks 0 to 6)
from being changed. When Write Protect, WP, is
driven Low, V
IL
, Program and Erase operations in
the Main Blocks have no effect, regardless of the
state of the Lock Register. When Write Protect,
WP, is driven High, V
IH
, the protection of the Block
is determined by the Lock Register. The state of
Write Protect, WP, does not affect the protection of
the Top Block (Block 7). For details, see
APPEN-
DIX A.
.
Write Protect, WP, must be set prior to a Program
or Erase operation is initiated, and must not be
changed until the operation has completed other-
wise unpredictable results may occur. Similarly,
unpredictable behavior is possible if WP is
changed during Program or Erase Suspend, and
care should be taken to avoid this.
Reserved for Future Use (RFU).
These pins do
not presently have assigned functions. They must
be left disconnected, except for ID3 (when in LPC
mode) which can be left connected. The electrical
characteristics for this signal are as described in
the
“
Identification Inputs (ID0-ID3).
”
section.
Address/Address Multiplexed (A/A Mux)
Signal Descriptions
Please see
Figure 3.
and
Table 2.
.
Address Inputs (A0-A10).
The Address Inputs
are used to set the Row Address bits (A0-A10) and
the Column Address bits (A11-A18). They are
latched during any bus operation by the Row/Col-
umn Address Select input, RC.
Data Inputs/Outputs (DQ0-DQ7).
The Data In-
puts/Outputs hold the data that is to be written to
or read from the memory. They output the data
stored at the selected address during a Bus Read
operation. During Bus Write operations they carry
the commands that are sent to the Command In-
terface of the internal state machine. The Data In-
puts/Outputs, DQ0-DQ7, are latched during a Bus
Write operation.
Output Enable (G).
The Output Enable signal, G,
controls the output buffers during a Bus Read op-
eration.
Write Enable (W).
The Write Enable signal, W,
controls the Bus Write operation of the Command
Interface.
Row/Column Address Select (RC).
The
Column Address Select input selects whether the
Address Inputs are to be latched into the Row Ad-
Row/
dress bits (A0-A10) or the Column Address bits
(A11-A18). The Row Address bits are latched on
the falling edge of RC whereas the Column Ad-
dress bits are latched on its rising edge.
Ready/Busy Output (RB).
The Ready/Busy pin
gives the status of the device
’
s Program/Erase
Controller. When Ready/Busy is Low, V
OL
, the de-
vice is busy with a program or erase operation,
and it will not accept any additional program or
erase command (except for the Program/Erase
Suspend command). When Ready/Busy is High,
V
OH
, the memory is ready for any read, program or
erase operation.
Supply Signal Descriptions
The Supply Signals are the same for both interfac-
es.
V
CC
Supply Voltage.
The V
CC
Supply Voltage
supplies the power for all operations (read, pro-
gram, erase, etc.).
The Command Interface is disabled when the V
CC
Supply Voltage is less than the Lockout Voltage,
V
LKO
. This is to prevent Bus Write operations from
accidentally damaging the data during power up,
power down and power surges. If the Program/
Erase Controller is programming or erasing during
this time, the operation aborts, and the memory
contents that were being altered will be invalid. Af-
ter V
CC
becomes valid, the Command Interface is
reset to Read mode.
A 0.1μF capacitor should be connected between
the V
CC
Supply Voltage pins and the V
SS
Ground
pin to decouple the current surges from the power
supply. Both V
CC
Supply Voltage pins must be
connected to the power supply. The PCB track
widths must be sufficient to carry the currents re-
quired during program and erase operations.
V
PP
Optional Supply Voltage.
The V
PP
Optional
Supply Voltage pin is used to select the Fast Pro-
gram (see the Quadruple Byte Program command
description in A/A Mux interface and the Double/
Quadruple Byte Program command description in
FWH mode) and Fast Erase options of the memo-
ry.
When V
PP
= V
CC
, program and erase operations
take place as normal. When V
PP
= V
PPH
, Fast Pro-
gram and Erase operations are used. Any other
voltage input to V
PP
will result in undefined behav-
ior, and should not be used.
V
PP
should not be set to V
PPH
for more than
80 hours during the life of the memory.
V
SS
Ground.
V
SS
is the reference for all the volt-
age measurements.
相關PDF資料 |
PDF描述 |
|---|---|
| M50FLW040ANB5 | 4 Mbit (5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| M50FLW040ANB5G | 4 Mbit (5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| M50FLW040ANB5P | 4 Mbit (5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| M50FLW040ANB5T | 4 Mbit (5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| M50FLW040ANB5TG | 4 Mbit (5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M50FLW040ANB5 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| M50FLW040ANB5G | 功能描述:閃存 SERIAL FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M50FLW040ANB5P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| M50FLW040ANB5T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| M50FLW040ANB5TG | 功能描述:閃存 SERIAL FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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