參數(shù)資料
型號: M50FLW040AN5G
廠商: 意法半導體
英文描述: 4-Mbit (5 】 64 Kbyte blocks + 3 】 16 】 4 Kbyte sectors) 3-V supply Firmware Hub / low-pin count Flash memory
中文描述: 4兆位(5】64字節(jié)塊3】16】4 Kbyte的)3 - V電源供電固件集線器/低引腳數(shù)的閃存
文件頁數(shù): 16/64頁
文件大?。?/td> 338K
代理商: M50FLW040AN5G
Signal descriptions
M50FLW040A, M50FLW040B
16/64
2.2.6
Ready/Busy output (RB)
The Ready/Busy pin gives the status of the device’s Program/Erase Controller. When
Ready/Busy is Low, V
OL
, the device is busy with a program or erase operation, and it will not
accept any additional program or erase command (except for the Program/Erase Suspend
command). When Ready/Busy is High, V
OH
, the memory is ready for any read, program or
erase operation.
2.3
Supply signal descriptions
The Supply Signals are the same for both interfaces.
2.3.1
V
CC
supply voltage
The V
CC
Supply Voltage supplies the power for all operations (read, program, erase, etc.).
The Command Interface is disabled when the V
CC
Supply Voltage is less than the Lockout
Voltage, V
LKO
. This is to prevent Bus Write operations from accidentally damaging the data
during power up, power down and power surges. If the Program/Erase Controller is
programming or erasing during this time, the operation aborts, and the memory contents
that were being altered will be invalid. After V
CC
becomes valid, the Command Interface is
reset to Read mode.
A 0.1μF capacitor should be connected between the V
CC
Supply Voltage pins and the V
SS
Ground pin to decouple the current surges from the power supply. Both V
CC
Supply Voltage
pins must be connected to the power supply. The PCB track widths must be sufficient to
carry the currents required during program and erase operations.
2.3.2
V
PP
optional supply voltage
The V
PP
Optional Supply Voltage pin is used to select the Fast Program (see the Quadruple
Byte Program command description in A/A Mux interface and the Double/Quadruple Byte
Program command description in FWH mode) and Fast Erase options of the memory.
When V
PP
= V
CC
, program and erase operations take place as normal. When V
PP
= V
PPH
,
Fast Program and Erase operations are used. Any other voltage input to V
PP
will result in
undefined behavior, and should not be used.
V
PP
should not be set to V
PPH
for more than 80 hours during the life of the memory.
2.3.3
V
SS
ground
V
SS
is the reference for all the voltage measurements.
相關PDF資料
PDF描述
M50FLW080BK5P 8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
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相關代理商/技術(shù)參數(shù)
參數(shù)描述
M50FLW040AN5P 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory
M50FLW040AN5T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory
M50FLW040AN5TG 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory
M50FLW040AN5TP 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory
M50FLW040ANB1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory