參數(shù)資料
型號: M4N25
廠商: MOTOROLA INC
元件分類: 光電耦合器
英文描述: 6-Pin DIP Optoisolators Transistor Output
中文描述: 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
封裝: PLASTIC, DIP-6
文件頁數(shù): 2/8頁
文件大?。?/td> 139K
代理商: M4N25
2
Motorola Optoelectronics Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)(1)
Characteristic
Symbol
Min
Typ
(1)
Max
Unit
INPUT LED
Forward Voltage (IF = 10 mA)
TA = 25
°
C
TA = –55
°
C
TA = 100
°
C
VF
1.15
1.3
1.05
1.5
Volts
Reverse Leakage Current (VR = 3 V)
Capacitance (V = 0 V, f = 1 MHz)
IR
CJ
100
μ
A
18
pF
OUTPUT TRANSISTOR
Collector–Emitter Dark Current
(VCE = 10 V, TA = 25
°
C)
ICEO
1
50
nA
(VCE = 10 V, TA = 100
°
C)
Collector–Base Dark Current (VCB = 10 V)
Collector–Emitter Breakdown Voltage (IC = 1 mA)
Collector–Base Breakdown Voltage (IC = 100
μ
A)
Emitter–Collector Breakdown Voltage (IE = 100
μ
A)
Collector–Emitter Capacitance (f = 1 MHz, VCE = 0)
Collector–Base Capacitance (f = 1 MHz, VCB = 0)
Emitter–Base Capacitance (f = 1 MHz, VEB = 0)
ICEO
ICBO
1
μ
A
0.2
nA
V(BR)CEO
V(BR)CBO
V(BR)ECO
CCE
CCB
CEB
30
45
Volts
70
100
Volts
7
7.8
Volts
7
pF
19
pF
9
pF
COUPLED
Output Collector Current (IF = 10 mA, VCE = 10 V)
Collector–Emitter Saturation Voltage (IC = 2 mA, IF = 50 mA)
Turn–On Time (IF = 10 mA, VCC = 10 V, RL = 100
)(3)
Turn–Off Time (IF = 10 mA, VCC = 10 V, RL = 100
)(3)
Rise Time (IF = 10 mA, VCC = 10 V, RL = 100
)(3)
Fall Time (IF = 10 mA, VCC = 10 V, RL = 100
)(3)
Isolation Voltage (f = 60 Hz, t = 1 sec)(4)
Isolation Resistance (V = 500 V)(4)
Isolation Capacitance (V = 0 V, f = 1 MHz)(4)
IC (CTR)(2)
VCE(sat)
ton
toff
tr
tf
VISO
RISO
CISO
2 (20)
7 (70)
mA (%)
0.15
0.5
Volts
2.8
μ
s
4.5
μ
s
2
μ
s
2
μ
s
7500
1011
Vac(pk)
0.2
pF
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = IC/IF x 100%.
3. For test circuit setup and waveforms, refer to Figure 14.
4. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
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