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參數(shù)資料
| 型號(hào)： | M4A6H146 |
| 元件分類： | 變?nèi)荻O管 |
| 英文描述： | 0.063 pF, 26 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE |
| 封裝： | ROHS COMPLIANT PACKAGE-2 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 113K |
| 代理商： | M4A6H146 |
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
RoHs Compliant
GaAs Flip-Chip Multiplier Varactor Diode
V3
MA46H146
2
Electrical Specifications @ TA = +25 °C
Gamma 0.50 Abrupt Multiplier Varactors
Breakdown Voltage @ 10 μA = 26V minimum
Reverse Current @ 18 V = 50 nA maximum
Gamma = 0.45-0.55, VR = 0 to 20 V
Part Number
Total
Capacitance
Total
Capacitance
Ratio
Q
Minimum
Vr=0V
F=1MHz
Vr=0V
Vr=25V
Vr=4V
f=50MHz
(pF)
-
MA46H146
0.063
2.1
15600
Typical
Total
Capacitance
Vr=4V
F=1MHz
(pF)
Typical
0.040
Total
Capacitance
Vr=10V
F=1MHz
(pF)
Typical
0.032
Total
Capacitance
Vr=25V
F=1MHz
(pF)
Typical
0.030
Applications
These GaAs Flip Chip devices are suited for milli-
meter wave frequency tunable filters, where ex-
tremely low parastics are required to maintain rea-
sonable Q. In addition, this product can be used in
multiplier circuits, for 2X and 3X output frequencies
in the millimeter wave frequency bands.
Assembly Requirements using
Electrically Conductive Ag Epoxy
These chips are designed to be inserted onto hard
or soft substrates with the junction side down. They
must be mounted with Electrically Conductive Ag
epoxy. Solders are not recommended due to Tung-
sten metallization beneath the gold contacts. The
die can also be assembled with the junction side
up, and wire or ribbon bonds made from the bond
pads to the circuit trace. Circuit can be preheated
to 125 – 150 °C. Use a controlled amount of con-
ductive epoxy for each bond pad. Finished, uniform
silver epoxy thickness should be between 1 – 2
mils. Cure epoxy per manufacturer’s schedule. For
extended cure times, temperatures must be below
200 °C.
Handling Procedures
The following precautions should damaging GaAs
Flip-Chips:
Cleanliness
These chips should be handled in a clean environ-
ment. Do not attempt to clean die after installation.
Static Voltage Sensitivity
Varactor diodes are ESD sensitive and can be
damaged by static electricity. Proper ESD tech-
niques and precautions should be followed when
handling these devices.
General Handling
The protective polymer coating on the active areas
of these devices provides scratch protection, par-
ticularly for the metal Airbridge which contacts the
anode. Dice can be handled with tweezers or vac-
uum pickups and are suitable for use with auto-
matic pick-and-place equipment.
Specifications Subject to Change Without Notice.
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