參數(shù)資料
型號(hào): M48T58Y-70MH1E
廠商: STMICROELECTRONICS
元件分類: 時(shí)鐘/數(shù)據(jù)恢復(fù)及定時(shí)提取
英文描述: 0 TIMER(S), REAL TIME CLOCK, PDSO28
封裝: 0.330 INCH, ROHS COMPLIANT, PLASTIC, SOH-28
文件頁數(shù): 17/33頁
文件大?。?/td> 511K
代理商: M48T58Y-70MH1E
DC and AC parameters
M48T58, M48T58Y
Doc ID 2412 Rev 7
Table 10.
Power down/up AC characteristics
Table 11.
Power down/up trip points DC characteristics
Symbol
Parameter(1)
1.
Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.75 to 5.5 V or 4.5 to 5.5 V (except where
noted).
Min
Max
Unit
tPD
E1 or W at VIH or E2 at VIL before power down
0
s
tF
(2)
2.
VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring
until 200 s after VCC passes VPFD (min).
VPFD (max) to VPFD (min) VCC fall time
300
s
tFB
(3)
3.
VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.
VPFD (min) to VSS VCC fall time
M48T58
10
s
M48T58Y
10
s
tR
VPFD (min) to VPFD (max) VCC rise time
10
s
tRB
VSS to VPFD (min) VCC rise time
1
s
trec
VPFD (max) to inputs recognized
40
200
ms
Symbol
Parameter(1)(2)
1.
Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.75 to 5.5 V or 4.5 to 5.5 V (except where
noted).
2.
All voltages referenced to VSS.
Min
Typ
Max
Unit
VPFD
Power-fail deselect voltage
M48T58
4.5
4.6
4.75
V
M48T58Y
4.2
4.35
4.5
V
VSO
Battery backup switchover voltage
3.0
V
tDR
(3)
3.
At 25 °C, VCC = 0 V.
Expected data retention time
7
Years
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