參數(shù)資料
型號： M48T212Y-70MH1F
廠商： STMICROELECTRONICS
元件分類： 時鐘/數(shù)據(jù)恢復(fù)及定時提取
英文描述： REAL TIME CLOCK, PDSO44
封裝： 0.330 INCH, LEAD FREE, PLASTIC, SOH-44
文件頁數(shù)： 18/32頁
文件大?。?/td> 473K
代理商： M48T212Y-70MH1F
25/32
M48T212Y, M48T212V
Table 14. DC Characteristics
Note: 1. Valid for Ambient Operating Temperature: TA = 0 to 70°C or –40 to 85°C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted).
2. RSTIN1 and RSTIN2 internally pulled-up to VCC through 100K resistor. WDI internally pulled-down to VSS through 100K resistor.
3. Outputs deselected.
4. IBAT (OSC ON) = Industrial Temperature Range - Grade 6 device.
5. For IRQ/FT & RST pins (Open Drain).
6. Conditioned outputs (E1CON - E2CON) can only sustain CMOS leakage currents in the battery back-up mode. Higher leakage cur-
rents will reduce battery life.
7. External SRAM must match TIMEKEEPER SUPERVISOR chip VCC specification.
Sym
Parameter
Test Condition(1)
M48T212Y
M48T212V
Unit
–70
–85
Min
Typ
Max
Min
Typ
Max
ILI
(2)
Input Leakage Current
0V
≤ VIN ≤ VCC
±1
A
ILO
(3)
Output Leakage Current
0V
≤ VOUT ≤ VCC
±1
A
ICC
Supply Current
Outputs open
8
15
4
10
mA
ICC1
Supply Current (Standby)
TTL
E = VIH
53
mA
ICC2
Supply Current (Standby)
CMOS
E = VCC –0.2
32
mA
IBAT
Battery Current OSC ON
VCC = 0V
575
800
575
800
nA
Battery Current OSC
ON(4)
950
1250
950
1250
nA
Battery Current OSC
OFF
100
nA
VIL
Input Low Voltage
–0.3
0.8
–0.3
0.8
V
VIH
Input High Voltage
2.2
VCC +
0.3
2.0
VCC +
0.3
V
VOL
Output Low Voltage
IOL = 2.1mA
0.4
V
Output Low Voltage
(open drain) (5)
IOL = 10mA
0.4
V
VOH
Output High Voltage
IOH = –1.0mA
2.4
V
VOHB
(6)
VOH Battery Back-up
IOUT2 = –1.0A
2.0
3.6
2.0
3.6
V
IOUT1
(7)
VOUT Current (Active)
VOUT1 > VCC –0.3
100
70
mA
IOUT2
VOUT Current (Battery
Back-up)
VOUT2 > VBAT –0.3
100
A
VPFD
Power-fail Deselect
Voltage
4.2
4.35
4.5
2.7
2.9
3.0
V
VSO
Battery Back-up
Switchover Voltage
3.0
VPFD –
100mV
V
VBAT
Battery Voltage
3.0
V
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