參數(shù)資料
型號: M48T212V-70MH6
廠商: STMICROELECTRONICS
元件分類: 時鐘/數(shù)據(jù)恢復(fù)及定時提取
英文描述: 0 TIMER(S), REAL TIME CLOCK, PDSO44
封裝: SNAPHAT, PLASTIC, SO-44
文件頁數(shù): 19/23頁
文件大小: 150K
代理商: M48T212V-70MH6
5/23
M48T212Y, M48T212V
Table 6. Capacitance (1)
(TA =25 °C, f = 1 MHz)
Note: 1. Sampled only, not 100% tested.
2. Outputs deselected.
Table 7A. DC Characteristics for M48T212V
(TA = 0 to 70°C; VCC = 3V to 3.6V)
Note: 1. Outputs deselected.
2. RSTIN1 and RSTIN2 internally pulled-up to VCC through 100K resistor. WDI internally pulled-down to VSS through 100K resistor.
3. For IRQ/FT & RST pins (Open Drain).
4. Conditioned outputs (E1CON -E2CON) can only sustain CMOS leakage currents in the battery back-up mode. Higher leakage cur-
rents will reduce battery life.
5. External SRAM must match TIMEKEE PER Controller chip VCC specification.
Symbol
Parameter
Test Condit ion
Min
Max
Unit
CIN
Input Capacitance
VIN =0V
10
pF
COUT
(2)
Input/Output Capacitance
VOUT =0V
10
pF
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
ILI
(1,2)
Input Leakage Current
0V
≤ VIN ≤ VCC
±1
A
ILO
(1)
Output Leakage Current
0V
≤ VOUT ≤ VCC
±1
A
ICC
Supply Current
Outputs open
4
10
mA
ICC1
Supply Current (Standby) TTL
E= VIH
3mA
ICC2
Supply Current (Standby) CMOS
E= VCC –0.2
2mA
IBAT
Battery Current OSC ON
575
800
nA
Battery Current OSC OFF
100
nA
VIL
Input Low Voltage
–0.3
0.8
V
VIH
Input High Voltage
2.0
VCC + 0.3
V
VOL
Output Low Voltage
IOL = 2.1mA
0.4
V
Output Low Voltage (open drain) (3)
IOL = 10mA
0.4
V
VOH
Output High Voltage
IOH = –1.0mA
2.4
V
VOHB
(4)
VOH Battery Back-up
IOUT2 = –1.0A
2.0
3.6
V
IOUT1
(5)
VOUT Current (Active)
VOUT1 >VCC –0.3
70
mA
IOUT2
VOUT Current (Battery Back-up)
VOUT2 >VBAT –0.3
100
A
VPFD
Power-fail Deselect Voltage
2.7
2.9
3.0
V
VSO
Battery Back-up Switchover Voltage
VPFD –100mV
V
VBAT
Battery Voltage
3.0
V
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