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參數(shù)資料
| 型號(hào)： | M470T3354CZ3-CD5 |
| 廠(chǎng)商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 40 characters x 2 Lines, 5x7 Dot Matric Character and Cursor |
| 中文描述： | 內(nèi)存緩沖的SODIMM 200pin緩沖的SODIMM上的512Mb基于C模具64非ECC |
| 文件頁(yè)數(shù)： | 18/18頁(yè) |
| 文件大?。?/td> | 328K |
| 代理商： | M470T3354CZ3-CD5 |
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Rev. 1.2 Aug. 2005
256MB, 512MB, 1GB Unbuffered SODIMMs
DDR2 SDRAM
Revision History
Revision 1.0 (Mar. 2005)
- Initial Release
Revision 1.1 (Mar. 2005)
- Changed IDD0/IDD3N/IDD3P current values.
- Added Lowpower current values.
Revision 1.2 (Aug. 2005)
- Changed the IDD Current Values.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M470T6554CZ3-CD5 | 40 characters x 2 Lines, 5x7 Dot Matric Character and Cursor |
| M470T6554CZ0-CCC | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T6554CZ0-CD5 | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T2953CZ0-CLCC | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T2953CZ0-CLD5 | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M470T3354CZ3-CE6 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T3354CZ3-CE7 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T3354CZ3-CLCC | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T3354CZ3-CLD5 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T3354CZ3-CLE6 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
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