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參數(shù)資料
| 型號： | M470L3324BTU0-CLA2 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| 中文描述： | DDR SDRAM的緩沖模塊18 4針緩沖模塊基于512Mb乙芯片 |
| 文件頁數(shù)： | 3/20頁 |
| 文件大?。?/td> | 284K |
| 代理商： | M470L3324BTU0-CLA2 |
DDR SDRAM
256MB, 512MB, 1GB Unbuffered SODIMM
Rev. 0.1 June 2005
Preliminary
Revision History
Revision
0.0
Month
April
Year
2005
History
- First version for internal review
0.2
June
2005
- Changed master format.
相關PDF資料 |
PDF描述 |
|---|---|
| M470L3324BTU0-CLB0 | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| M470L3324BTU0-CLB3 | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| M470L3324BTU0-CLCC | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| M470L3324BT0-CA2 | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| M470L3324BT0-CB0 | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M470L3324BTU0-CLB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| M470L3324BTU0-CLB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| M470L3324BTU0-CLCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| M470L3324CU0-CA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die |
| M470L3324CU0-CB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die |
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