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參數(shù)資料
| 型號： | M470L3224BT0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256MB DDR SDRAM MODULE |
| 中文描述： | 256MB的DDR內(nèi)存模塊 |
| 文件頁數(shù)： | 3/20頁 |
| 文件大?。?/td> | 264K |
| 代理商： | M470L3224BT0 |
DDR SDRAM
128MB, 256MB SODIMM Pb-Free
Revision 1.2 Oct. 2004
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
200Pin Non ECC / ECC SODIMM based on 256Mb F-die(x16)
Ordering Information
Operating Frequencies
Part Number
Density
128MB
256MB
128MB
Organization
16M x 64
32M x 64
16M x 72
Component Composition
16Mx16 (K4H561638F) * 4EA
16Mx16 (K4H561638F) * 8EA
16Mx16 (K4H561638F) * 5EA
Height
1,250mil
1,250mil
1,250mil
M470L1624FU0-C(L)B3/A2/B0
M470L3224FU0-C(L)B3/A2/B0
M485L1624FU0-C(L)B3/A2/B0
B3(DDR333@CL=2.5)
133MHz
166MHz
2.5-3-3
A2(DDR266@CL=2)
133MHz
133MHz
2-3-3
B0(DDR266@CL=2.5)
100MHz
133MHz
2.5-3-3
Speed @CL2
Speed @CL2.5
CL-tRCD-tRP
Feature
Power supply : Vdd: 2.5V
±
0.2V, Vddq: 2.5V
±
0.2V
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe(DQS)
Differential clock inputs(CK and CK)
DLL aligns DQ and DQS transition with CK transition
Programmable Read latency 2, 2.5 (clock)
Programmable Burst length (2, 4, 8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input
Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
Serial presence detect with EEPROM
PCB : Height 1250 (mil), single(128MB), double(256MB) sided component
SSTL_2 Interface
Pb-Free
RoHS compliant
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M470L3224BTO | 256MB DDR SDRAM MODULE |
| M470L1624FU0-CA2 | DDR SDRAM SODIMM |
| M470L3224FU0-CA2 | Ring Core Bead Ferrite; Impedance:340ohm; Cable Diameter Max:0.203"; Width (Latch Included):1.23"; External Height:1.155"; External Width:1.125"; Length:1.25" |
| M485L1624FU0-CA2 | Ring Core Bead Ferrite; Impedance:200ohm; Cable Diameter Max:0.35"; Latch Height:0.2"; Width (Latch Included):0.885"; External Height:0.79"; External Width:0.77"; Length:1.45" |
| M470L1624FU0-CB0 | Split Core Ferrite Bead; Inner Diameter:0.45"; Package/Case:Split Ferrite Core; External Width:0.93"; Frequency:100MHz; Impedance:238ohm; Latch Height:0.38"; Mounting Type:Surface Mount; Width (Latch Included):1.035" RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M470L3224BTO | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256MB DDR SDRAM MODULE |
| M470L3224DT0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256MB DDR SDRAM MODULE |
| M470L3224DT0-CA0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256MB DDR SDRAM MODULE |
| M470L3224DT0-CA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256MB DDR SDRAM MODULE |
| M470L3224DT0-CB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256MB DDR SDRAM MODULE |
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