參數(shù)資料
型號: M464S6453CKS
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: PC133/PC100 SODIMM
中文描述: PC133/PC100的SODIMM
文件頁數(shù): 6/12頁
文件大小: 80K
代理商: M464S6453CKS
M464S6453CKS
Rev. 0.1 Feb. 2002
PC133/PC100 SODIMM
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Sym-
bol
Test Condition
Version
Unit
Note
-7A
-1H
-1L
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
t
RC
(min)
I
O
= 0 mA
960
960
960
mA
1
Precharge standby current
in power-down mode
I
CC2
P
CKE
V
IL
(max), t
CC
= 10ns
32
mA
I
CC2
PS
CKE & CLK
V
IL
(max), t
CC
=
32
Precharge standby current
in non power-down mode
I
CC2
N
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
320
mA
I
CC2
NS
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
160
Active standby current in
power-down mode
I
CC3
P
CKE
V
IL
(max), t
CC
= 10ns
96
mA
I
CC3
PS
CKE & CLK
V
IL
(max), t
CC
=
96
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
480
mA
I
CC3
NS
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
400
mA
Operating current
(Burst mode)
I
CC4
I
O
= 0 mA
Page burst
4Banks activated
t
CCD
= 2CLKs
1120
1040
1040
mA
1
Refresh current
I
CC5
t
RC
t
RC
(min)
1840
1760
1760
mA
2
Self refresh current
I
CC6
CKE
0.2V
C
48
mA
L
24
mA
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ
)
Notes :
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