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參數(shù)資料
| 型號(hào)： | M41T315Y-65MH6TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Serial Access Phantom RTC Supervisor |
| 中文描述： | 串行訪問幻影時(shí)鐘監(jiān) |
| 文件頁(yè)數(shù)： | 16/24頁(yè) |
| 文件大小： | 404K |
| 代理商： | M41T315Y-65MH6TR |
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M41T315Y*, M41T315V, M41T315W
16/24
Table 9. DC Characteristics
Note: 1. Valid for Ambient Operating Temperature: T
A
= –40 to 85°C; V
CC
= 4.5 to 5.5V or 2.7 to 3.6V (except where noted).
2. Applies to all input pins except RST, which is pulled internally to V
CCI
.
3. Measured without RAM connected.
4. I
CCO1
is the maximum average load current the device can supply to external memory.
5. Voltages are referenced to Ground.
6. Measured with load shown in
Figure 12., page 15
.
7. I
CCO2
is the maximum average load current that the device can supply to memory in the battery backup mode.
Sym
Parameter
Test
Condition
(1)
M41T315Y
M41T315V/W
Unit
–65
–85
Min
Typ
Max
Min
Typ
Max
I
IL(2)
Input Leakage
Current
0V
≤
V
IN
≤
V
CC
±1
±1
μA
I
OL
Output Leakage
Current
0V
≤
V
OUT
≤
V
CC
±1
±1
μA
I
CC1(3)
Supply Current
10
6
mA
I
CCO1(4)
V
CC
Power Supply
Current
V
CC0
=
V
CCI
– 0.3
150
100
mA
I
CC2(3)
Supply Current
(TTL Standby)
CEI = V
IH
3
2
mA
I
CC3(3)
V
CC
Power Supply
Current
CEI =
V
CCI
– 0.2
1
1
mA
V
IL(5)
Input Low Voltage
–0.3
0.8
–0.3
0.6
V
V
IH(5)
Input High Voltage
2.2
V
CC
+ 0.3
2.0
V
CC
+ 0.3
V
V
OL(6)
Output Low
Voltage
I
OL
= 4.0 mA
0.4
0.4
V
V
OH(6)
Output High
Voltage
I
OH
= –1.0 mA
2.4
2.4
V
V
PFD
Power Fail
Deselect
4.25
4.50
2.80 (V)
2.60 (W)
2.97 (V)
2.70 (W)
V
V
SO
Battery Back-up
Switchover
V
BAT
2.5
V
V
BAT
Battery Voltage
2.5
3.7
2.5
3.7
V
V
CEO
CEO Output
Voltage
V
CCI
– 0.2
or
V
BAT
– 0.2
V
CCI
– 0.2
or
V
BAT
– 0.2
V
I
BAT(3)
Battery Current
V
BAT
= 3.0V
T
A
= 25°C
V
CC
= 0V
0.5
0.5
μA
I
CCO2(7)
Battery Backup
Current
V
CCO
= V
BAT
– 0.2V
100
100
μA
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