參數(shù)資料
型號: M41T315W-85MQ6F
廠商: 意法半導(dǎo)體
英文描述: Serial Access Phantom RTC Supervisor
中文描述: 串行訪問幻影時(shí)鐘監(jiān)
文件頁數(shù): 17/24頁
文件大?。?/td> 404K
代理商: M41T315W-85MQ6F
17/24
M41T315Y*, M41T315V, M41T315W
Table 10. Crystal Electrical Characteristics (Externally Supplied)
Note: 1. These values are externally supplied. STMicroelectronics recommends the KDS DT-38: 1TA/1TC252E127, Tuning Fork Type (thru-
hole) or the DMX-26S: 1TJS125FH2A212, (SMD) quartz crystal for industrial temperature operations. KDS can be contacted at kou-
hou@kdsj.co.jp or http://www.kdsj.co.jp for further information on this crystal type.
Note: 1. Load capacitors are integrated within the M41T315Y/V/W. Circuit board layout considerations for the 32.768kHz crystal of minimum
trace lengths and isolation from RF generating signals should be taken into account.
Figure 13. Power Down/Up Mode AC Waveforms
Table 11. Power Down/Up Trip Points DC Characteristics
Note: 1. Valid for Ambient Operating Temperature: T
A
= –40 to 85°C; V
CC
= 4.5 to 5.5V or 2.7 to 3.6V (except where noted).
2. Measured at 25°C.
3. Measured with load shown in
Figure 12., page 15
.
4. Input pulse rise and fall times equal 10ns
Symbol
Parameter
(1,2)
Min
Typ
Max
Unit
f
O
Resonant Frequency
32.768
kHz
R
S
Series Resistance
60
k
C
L
Load Capacitance
12.5
pF
Symbol
Parameter
(1,2)
Min
Max
Unit
t
REC
V
PFD
(max) to CEI low
1.5
2.5
ms
t
F
V
PFD
(max) to V
PFD
(min) V
CC
Fall Time
300
μ
s
t
FB
V
PFD
(min) to V
SO
V
CC
Fall Time
10
μ
s
t
R
V
PFD
(min) to V
PFD
(max) V
CC
Rise Time
0
μ
s
t
PF
CEI High to Power-Fail
0
μ
s
t
PD(3,4)
CEI Propagation Delay
M41T315Y
10
ns
M41T315V/W
15
ns
VCC
VBAT – 0.2V
VBAT – 0.2V
CEI
CEO
tPD
tF
tPF
tR
tREC
tPD
VSO
tFB
VPFD (max)
VPFD (min)
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