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參數(shù)資料
| 型號： | M40Z300WMQ |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | NVRAM CONTROLLER for up to EIGHT LPSRAM |
| 中文描述： | NVRAM中多達(dá)8個LPSRAM控制器 |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 128K |
| 代理商： | M40Z300WMQ |
M40Z300, M40Z300W
2/16
When an invalid V
CC
condition occurs, the condi-
tioned chip enable outputs (E1
CON
to E4
CON
) are
forced inactive to write-protect the stored data in
the SRAM. During a power failure, the SRAM is
switched from the V
CC
pin to the lithium cell within
the SNAPHAT to provide the energy required for
data retention. On a subsequent power-up, the
SRAM remains write protected until a valid power
condition returns.
The 28 pin, 330 mil SOIC provides sockets with
gold plated contacts for direct connection to a sep-
arate SNAPHAT housing containing the battery.
The SNAPHAT housing has gold plated pins
which mate with the sockets, ensuring reliable
connection. The housing is keyed to prevent im-
proper insertion. This unique design allows the
SNAPHAT battery package to be mounted on top
of the SOIC package after the completion of the
surface mount process which greatly reduces the
board manufacturing process complexity of either
directly soldering or inserting a battery into a sol-
dered holder. Providing non-volatility becomes a
"SNAP".
The 16 pin SOIC provides battery pins for an ex-
ternal user supplied battery.
Figure 2A. SOIC28 Connections
AI02243
8
9
10
11
12
13
14
2
3
4
5
6
7
22
21
20
19
18
17
16
15
28
27
26
25
24
23
1
NC
BL
NC
NC
THS
VSS
NC
RST
NC
A
NC
B
NC
NC
NC
E3CON
NC
NC
E1CON
E2CON
NC
E
NC
E4CON
NC
NC
VOUT
VCC
M40Z300
M40Z300W
Table 1. Signal Names
THS
Threshold Select Input
E
Chip Enable Input
E1
CON
-E4
CON
Conditioned Chip Enable Output
A, B
Decoder Inputs
RST
Reset Output (Open Drain)
BL
Battery Low Output (Open Drain)
V
OUT
Supply Voltage Output
V
CC
Supply Voltage
V
SS
Ground
B+
Positive Battery Pin
B–
Negative Battery Pin
NC
Not Connected Internally
Figure 2B. SOIC16 Connections
AI03624
8
2
3
4
5
6
7
10
16
15
14
13
12
11
1
A
B
RST
E1CON
E2CON
E3CON
E4CON
E
B– (B+)
VSS
NC
VOUT
VCC
B+ (B–)
M40Z300
M40Z300W
BL
THS
9
( ) = M40Z300W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M40Z300WMQ1 | NVRAM CONTROLLER for up to EIGHT LPSRAM |
| M40Z300WMQ1TR | NVRAM CONTROLLER for up to EIGHT LPSRAM |
| M40Z300WSH | NVRAM CONTROLLER for up to EIGHT LPSRAM |
| M40Z300MH1 | NVRAM CONTROLLER for up to EIGHT LPSRAM |
| M40Z300MQ1 | CAP CER 4.7UF 4.0V 20% 0603 SMD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M40Z300WMQ1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NVRAM CONTROLLER for up to EIGHT LPSRAM |
| M40Z300WMQ1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:5V or 3V NVRAM supervisor for up to 8 LPSRAMs |
| M40Z300WMQ1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:5V or 3V NVRAM supervisor for up to 8 LPSRAMs |
| M40Z300WMQ1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs |
| M40Z300WMQ6 | 功能描述:監(jiān)控電路 Up to 8 Lo Pwr SRAM RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
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