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參數(shù)資料
| 型號： | M393T6553CZA-CE6 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb C-die 72-bit ECC |
| 中文描述： | 注冊的DDR2 SDRAM內(nèi)存模塊240針腳注冊模塊的512MB的基于C -死72位ECC |
| 文件頁數(shù)： | 4/21頁 |
| 文件大小： | 476K |
| 代理商： | M393T6553CZA-CE6 |
Rev. 1.2 Aug. 2005
512MB, 1GB, 2GB Registered DIMMs
DDR2 SDRAM
Operating Current Table(1-1) (TA=0oC, VDD= 1.9V)
M393T6553CZ3 / M393T6553CZA : 512MB(64Mx8 *9) Module
* IDD6 = DRAM current + standby current of PLL and Register
** Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
E7(800@CL=5)
E6(667@CL=5)
D5(533@CL=4)
CC(400@CL=3)
Unit
Notes
IDD0
TBD
1,240
1,130
mA
IDD1
TBD
1,405
1,285
mA
IDD2P
TBD
562
522
mA
IDD2Q
TBD
760
710
mA
IDD2N
TBD
775
715
mA
IDD3P-F
TBD
750
720
mA
IDD3P-S
TBD
348
338
mA
IDD3N
TBD
1,000
930
mA
IDD4W
TBD
1,620
1,410
mA
IDD4R
TBD
1,525
1,340
mA
IDD5B
TBD
1,780
1,720
mA
IDD6*
TBD
72
mA
IDD7
TBD
2,660
2,570
mA
M393T2953CZ3 / M393T2953CZA : 1GB(64Mx8 *18) Module
* IDD6 = DRAM current + standby current of PLL and Register
** Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
E7(800@CL=5)
E6(667@CL=5)
D5(533@CL=4)
CC(400@CL=3)
Unit
Notes
IDD0
TBD
1,655
1,575
mA
IDD1
TBD
1,830
1,770
mA
IDD2P
TBD
784
724
mA
IDD2Q
TBD
1,200
1,130
mA
IDD2N
TBD
1,180
1,150
mA
IDD3P-F
TBD
1,190
1,130
mA
IDD3P-S
TBD
546
516
mA
IDD3N
TBD
1,345
1,325
mA
IDD4W
TBD
2,065
1,865
mA
IDD4R
TBD
1,970
1,785
mA
IDD5B
TBD
2,215
2,125
mA
IDD6*
TBD
144
mA
IDD7
TBD
3,335
3,095
mA
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相關代理商/技術參數(shù) |
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|---|---|
| M393T6553CZA-CE7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb C-die 72-bit ECC |
| M-394064-10-8A | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Label format - Old format order code cross reference |
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| M39432-10WNC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM |
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