參數(shù)資料
型號(hào): M390S3253ETU-C7A
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 168pin Registered Module based on 256Mb E-die with 72-bit ECC
中文描述: 168線注冊(cè)模塊,基于256Mb電子芯片的72位ECC
文件頁(yè)數(shù): 16/26頁(yè)
文件大?。?/td> 662K
代理商: M390S3253ETU-C7A
256MB, 512MB, 1GB Registered DIMM
DC CHARACTERISTICS
Rev. 1.4 May 2004
SDRAM
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
Version
7A
Unit
Note
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
t
RC
(min)
I
O
= 0 mA
CKE
V
IL
(max), t
CC
= 10ns
CKE & CLK
V
IL
(max), t
CC
=
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
CKE
V
IL
(max), t
CC
= 10ns
CKE & CLK
V
IL
(max), t
CC
=
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
I
O
= 0 mA
Page burst
4Banks activated
t
CCD
= 2CLKs
t
RC
t
RC
(min)
CKE
0.2V
1,445
mA
1
Precharge standby current
in power-down mode
I
CC2
P
I
CC2
PS
390
40
mA
Precharge standby current
in non power-down mode
I
CC2
N
710
mA
I
CC2
NS
185
Active standby current in
power-down mode
I
CC3
P
I
CC3
PS
460
110
mA
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
800
mA
I
CC3
NS
455
mA
Operating current
(Burst mode)
I
CC4
1,625
mA
1
Refresh current
Self refresh current
I
CC5
I
CC6
2,345
405
mA
mA
2
M390S6453ET1 (64M x 72, 512MB Module)
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
Version
7A
Unit
Note
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
t
RC
(min)
I
O
= 0 mA
CKE
V
IL
(max), t
CC
= 10ns
CKE & CLK
V
IL
(max), t
CC
=
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
CKE
V
IL
(max), t
CC
= 10ns
CKE & CLK
V
IL
(max), t
CC
=
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
I
O
= 0 mA
Page burst
4Banks activated
t
CCD
= 2CLKs
t
RC
t
RC
(min)
CKE
0.2V
2,390
mA
1
Precharge standby current
in power-down mode
I
CC2
P
I
CC2
PS
425
75
mA
Precharge standby current
in non power-down mode
I
CC2
N
1,070
mA
I
CC2
NS
365
Active standby current in
power-down mode
I
CC3
P
I
CC3
PS
570
220
mA
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
1,250
mA
I
CC3
NS
905
mA
Operating current
(Burst mode)
I
CC4
2,750
mA
1
Refresh current
Self refresh current
I
CC5
I
CC6
4,190
460
mA
mA
2
M390S2858ETU(1) (128M x 72, 1GB Module)
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ
)
相關(guān)PDF資料
PDF描述
M390S3253ET1-C7A 168pin Registered Module based on 256Mb E-die with 72-bit ECC
M390S6450ETU-C7A 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
M390S6453ET1-C7A 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
M392T5160CJA-CF7 DDR2 Registered SDRAM MODULE
M393T1G60CJA-CE6 DDR2 Registered SDRAM MODULE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M390S3253HU1 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:SDRAM Product Guide
M390S6450CT1 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD
M390S6450CT1-C7A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD
M390S6450CT1-C7C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD
M390S6450ET1-C7A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:168pin Registered Module based on 256Mb E-die with 72-bit ECC