- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383298 > M390S2858CTU-C1H (SAMSUNG SEMICONDUCTOR CO. LTD.) PC133/PC100 Low Profile Registered DIMM PDF資料下載
參數(shù)資料
| 型號： | M390S2858CTU-C1H |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | PC133/PC100 Low Profile Registered DIMM |
| 中文描述： | PC133/PC100內(nèi)存超薄注冊 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 244K |
| 代理商： | M390S2858CTU-C1H |
M390S2858CTU
Rev. 0.1 Sept. 2001
PC133/PC100 Low Profile Registered DIMM
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
V
IN
, V
OUT
-1.0 ~ 4.6
V
Voltage on V
DD
supply relative to Vss
V
DD
, V
DDQ
-1.0 ~ 4.6
V
Storage temperature
T
STG
-55 ~ +150
°
C
Power dissipation
P
D
36
W
Short circuit current
I
OS
50
mA
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Note :
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= 0 to 70
°
C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
DD
3.0
3.3
3.6
V
Input high voltage
V
IH
2.0
3.0
V
DDQ
+0.3
V
1
Input low voltage
V
IL
-0.3
0
0.8
V
2
Output high voltage
V
OH
2.4
-
-
V
I
OH
= -2mA
Output low voltage
V
OL
-
-
0.4
V
I
OL
= 2mA
Input leakage current
I
LI
-10
-
10
uA
3
CAPACITANCE
(V
DD
= 3.3V, T
A
= 23
°
C, f = 1MHz, V
REF
=1.4V
±
200
mV)
Parameter
Symbol
Min
Max
Unit
Input capacitance (A
0
~ A
12
)
Input capacitance (RAS, CAS, WE)
Input capacitance (CKE0)
Input capacitance (CLK0)
Input capacitance (CS0, CS2)
Input capacitance (DQM0 ~ DQM7)
Input capacitance (BA0 ~ BA1)
Data input/output capacitance (DQ0 ~ DQ63)
Data input/output capacitance (CB0 ~ CB7)
C
IN1
C
IN2
C
IN3
C
IN4
C
IN5
C
IN6
C
IN7
C
OUT
C
OUT
1
-
-
-
-
-
-
-
-
-
15
15
15
20
15
15
15
22
22
pF
pF
pF
pF
pF
pF
pF
pF
pF
1. V
IH
(max) = 5.6V AC. The overshoot voltage duration is
≤
3ns.
2. V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
V
IN
≤
V
DDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Notes :
相關PDF資料 |
PDF描述 |
|---|---|
| M390S2858DT1 | 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD |
| M390S2858DT1-C7A | 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD |
| M390S2858DT1-C7C | 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD |
| M390S6450CT1 | 64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD |
| M390S6450CT1-C7A | 64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M390S2858CTU-C1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:PC133/PC100 Low Profile Registered DIMM |
| M390S2858CTU-C7A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:PC133/PC100 Low Profile Registered DIMM |
| M390S2858CTU-C7C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:PC133/PC100 Low Profile Registered DIMM |
| M390S2858DT1 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD |
| M390S2858DT1-C7A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD |
發(fā)布緊急采購，3分鐘左右您將得到回復。