- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄370957 > M38B42E8H-XXXXFP (Mitsubishi Electric Corporation) SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER PDF資料下載
參數(shù)資料
| 型號(hào)： | M38B42E8H-XXXXFP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
| 中文描述： | 單芯片8位CMOS微機(jī) |
| 文件頁(yè)數(shù)： | 65/78頁(yè) |
| 文件大?。?/td> | 1214K |
| 代理商： | M38B42E8H-XXXXFP |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)當(dāng)前第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)
65
38B4 Group
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
MITSUBISHI MICROCOMPUTERS
MASK OPTION OF PULL-DOWN RESISTOR
(object product: M38B4XMXH-XXXXFP)
Whether built-in pull-down resistors are connected or not to high-
breakdown voltage ports P2
0
to P2
7
and P8
0
to P8
3
can be specified
in ordering mask ROM. The option type can be specified from among
8 types; A to G, P as shown Table 11.
Table 11 Mask option type of pull-down resistor
Connective port of pull-down resistor
(connected at “1” writing)
P2
0
P2
1
P2
2
P2
3
P2
4
P2
5
P2
6
P2
7
P8
0
P8
1
P8
2
P8
3
A ($41)
B ($42)
C ($43)
D ($44)
E ($45)
F ($46)
G ($47)
P ($50)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Notes 1:
The electrical characteristics of high-breakdown voltage ports
P2
0
to P2
7
and P8
0
to P8
3
’s built-in pull-down resistors are the
same as that of high-breakdown voltage ports P0
0
to P0
7
.
2:
The absolute maximum ratings of power dissipation may be
exceed owing to the number of built-in pull-down resistor. After
calculating the power dissipation, specify the option type.
3:
One time PROM version and EPROM version cannot be
specified whether built-in pull-down resistors are connected or not
likewise option type A.
4:
INT
3
function and CNTR
1
function cannot be used in the option
type P.
Power Dissipation Calculating Method
G
Fixed number depending on microcomputer’s standard
V
OH
output fall voltage of high-breakdown port
2 V (max.); | Current value | = at 18 mA
Resistor value 43 V / 900
μ
A = 48 k
(min.)
Power dissipation of internal circuit (CPU, ROM, RAM etc.) = 5 V
15 mA = 75 mW
G
Fixed number depending on use condition
Apply voltage to V
EE
pin: Vcc – 45 V
Timing number a; digit number b; segment number c
Ratio of Toff time corresponding Tdisp time: 1/16
Turn ON segment number during repeat cycle: d
All segment number during repeat cycle: e (= a
c)
Total number of built-in resistor: for digit; f, for segment; g
Digit pin current value h (mA)
Segment pin current value i (mA)
(1) Digit pin power dissipation
{h
b
(1–Toff/Tdisp)
voltage} / a
(2) Segment pin power dissipation
{i
d
(1–Toff/Tdisp)
voltage} / a
(3) Pull-down resistor power dissipation (digit)
{power dissipation per 1 digit
(b
f / b)
(1–Toff/Tdisp) } / a
(4) Pull-down resistor power dissipation (segment)
{
power dissipation per 1 segment
(d
g / c)
(1–Toff/Tdisp) } / a
(5)
Internal circuit power dissipation (CPU, ROM, RAM etc.) = 75 mW
(1) + (2)+ (3) + (4) + (5) = X mW
Power Dissipation Calculating Example 1
G
Fixed number depending on microcomputer’s standard
V
OH
output fall voltage of high-breakdown port
2 V (max.); | Current value | = at 18 mA
Resistor value 43 V / 900
μ
A = 48 k
(min.)
Power dissipation of internal circuit (CPU, ROM, RAM etc.) = 5 V
15 mA = 75 mW
G
Fixed number depending on use condition
Apply voltage to V
EE
pin: Vcc – 45 V
Timing number 17; digit number 16; segment number 20
Ratio of Toff time corresponding Tdisp time: 1/16
Turn ON segment number during repeat cycle: 31
All segment number during repeat cycle: 340 (= 17
20)
Total number of built-in resistor: for digit; 16, for segment; 20
Digit pin current value: 18 (mA)
Segment pin current value: 3 (mA)
(1) Digit pin power dissipation
{18
16
(1–1/16)
2} / 17 = 31.77 mW
(2) Segment pin power dissipation
{3
31
(1–1/16)
2} / 17 = 10.26 mW
(3) Pull-down resistor power dissipation (digit)
(45 – 2)
2
/48
(16
16/16)
(1 – 1/16) / 17 = 33.99 mW
(4) Pull-down resistor power dissipation (segment)
(45 – 2)
2
/48
(31
20/20)
(1 – 1/16) / 17 = 65.86 mW
(5)
Internal circuit power dissipation (CPU, ROM, RAM etc.) = 75 mW
(1) + (2)+ (3) + (4) + (5) = 217 mW
Fig. 75 Digit timing waveform (1)
Option
type
Restriction
(Note 4)
D
I
G
0
D
I
G
1
D
I
G
2
D
I
G
3
D
I
G
1
4
D
I
G
1
5
D
I
G
1
6
T
i
m
i
n
g
n
u
m
b
e
r
1
2
3
1
6
1
7
1
5
1
4
T
s
c
a
n
R
e
p
e
a
t
c
y
c
l
e
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M38B43E8H-XXXXFP | SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
| M38B47E8H-XXXXFP | SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
| M38B41E9H-XXXXFP | SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
| M38B42E9H-XXXXFP | SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
| M38B47E9H-XXXXFP | SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M38B42E9H-XXXXFP | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
| M38B42EAH-XXXXFP | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
| M38B42EBH-XXXXFP | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
| M38B42ECH-XXXXFP | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
| M38B42EDH-XXXXFP | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。