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參數(shù)資料
| 型號(hào)： | M378T6453FZ3-CD5 |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 64M X 64 DDR DRAM MODULE, 0.5 ns, DMA240 |
| 封裝： | ROHS COMPLIANT, DIMM-240 |
| 文件頁(yè)數(shù)： | 12/20頁(yè) |
| 文件大小： | 382K |
| 代理商： | M378T6453FZ3-CD5 |
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Rev. 1.3 Aug. 2005
256MB, 512MB Unbuffered DIMMs
DDR2 SDRAM
DDR2 Unbuffered DIMM Ordering Information
Note: “Z” of Part number(11th digit) stand for Lead-free products.
Note: “3” of Part number(12th digit) stand for Dummy Pad PCB products.
Part Number
Density
Organization
Component Composition
Number of Rank
Height
x64 Non ECC
M378T3253FG(Z)3-CE6/D5/CC
256MB
32Mx64
32Mx8(K4T56083QF)*8
1
30mm
M378T3253FG(Z)0-CE6/D5/CC
256MB
32Mx64
32Mx8(K4T56083QF)*8
1
30mm
M378T6453FG(Z)3-CE6/D5/CC
512MB
64Mx64
32Mx8(K4T56083QF)*16
2
30mm
M378T6453FG(Z)0-CE6/D5/CC
512MB
64Mx64
32Mx8(K4T56083QF)*16
2
30mm
x72 ECC
M391T3253FG(Z)3-CE6/D5/CC
256MB
32Mx72
32Mx8(K4T56083QF)*9
1
30mm
M391T3253FG(Z)0-CE6/D5/CC
256MB
32Mx72
32Mx8(K4T56083QF)*9
1
30mm
M391T6453FG(Z)3-CE6/D5/CC
512MB
64Mx72
32Mx8(K4T56083QF)*18
2
30mm
M391T6453FG(Z)0-CE6/D5/CC
512MB
64Mx72
32Mx8(K4T56083QF)*18
2
30mm
Features
Performance range
JEDEC standard 1.8V ± 0.1V Power Supply
VDDQ = 1.8V ± 0.1V
200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin
4 Banks
Posted CAS
Programmable CAS Latency: 3, 4, 5
Programmable Additive Latency: 0, 1 , 2 , 3 and 4
Write Latency(WL) = Read Latency(RL) -1
Burst Length: 4 , 8(Interleave/nibble sequential)
Programmable Sequential / Interleave Burst Mode
Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
Off-Chip Driver(OCD) Impedance Adjustment
On Die Termination
Average Refresh Period 7.8us at lower than a TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C
- support High Temperature Self-Refresh rate enable feature
Package: 60ball FBGA - 32Mx8
All of Lead-free products are compliant for RoHS
Note: For detailed DDR2 SDRAM operation, please refer to Samsung’s Device operation & Timing diagram.
E6(DDR2-667)
D5(DDR2-533)
CC(DDR2-400)
Unit
Speed@CL3
400
Mbps
Speed@CL4
533
400
Mbps
Speed@CL5
667
-
-Mbps
CL-tRCD-tRP
5-5-5
4-4-4
3-3-3
CK
Address Configuration
Organization
Row Address
Column Address
Bank Address
Auto Precharge
32Mx8(256Mb) based Module
A0-A12
A0-A9
BA0-BA1
A10
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M378T6453FZ3-CE6 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:DDR2 Unbuffered SDRAM MODULE |
| M378T6464EHS | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:DDR2 SDRAM Memory |
| M378T6464QZH3 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:DDR2 SDRAM Memory |
| M378T6553BG(Z)0-CD5/CC | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC |
| M378T6553BG(Z)3-CD5/CC | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC |
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