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參數(shù)資料
| 型號： | M374F3200DJ1-C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V |
| 中文描述： | 32M × 72配置，帶ECC DRAM的內(nèi)存使用16Mx4，4K的 |
| 文件頁數(shù)： | 5/20頁 |
| 文件大?。?/td> | 339K |
| 代理商： | M374F3200DJ1-C |
DRAM MODULE
M374F320(8)0DJ1-C
REV. 0.1 Oct. 2000
AC CHARACTERISTICS
(0
°
C
≤
T
A
≤
70
°
C, V
CC
=3.3V
±
0.3V. See notes 1,2.)
Test condition : V
ih
/V
il
=2.2/0.7V, V
oh
/V
ol
=2.0/0.8V, output loading C
L
=100pF
Parameter
Symbol
-50
-60
Unit
Note
Min
45
47
5
10
5
Max
Min
53
58
5
10
5
Max
Column address to W delay time
CAS precharge to W delay time
CAS setup time (CAS-before-RAS refresh)
CAS hold time (CAS-before-RAS refresh)
RAS to CAS precharge time
Access time from CAS precharge
Hyper page mode cycle time
Hyper page mode read-modify write cycle time
CAS precharge time (Hyper page cycle)
RAS pulse width (Hyper page cycle)
RAS hold time from CAS precharge
OE access time
OE to data delay
Output buffer turn off delay time from OE
OE command hold time
Output data hold time
Output buffer turn off delay from RAS
Output buffer turn off delay from W
W to data delay
OE to CAS hold time
CAS hold time to OE
OE precharge time
W pulse width (Hyper page cycle)
t
AWD
t
CPWD
t
CSR
t
CHR
t
RPC
t
CPA
t
HPC
t
HPRWC
t
CP
t
RASP
t
RHCP
t
OEA
t
OED
t
OEZ
t
OEH
t
DOH
t
REZ
t
WEZ
t
WED
t
OCH
t
CHO
t
OEP
t
WPE
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
7
28
35
3
11
11
20
67
7
50
30
25
73
10
60
35
200K
200K
13
15
10
3
5
5
3
3
15
5
5
5
5
13
3
5
5
3
3
15
5
5
5
5
13
13
6
13
13
13
13
6,10
6
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M374F3280DJ1-C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V |
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