- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359059 > M36WT864BF (意法半導(dǎo)體) 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product PDF資料下載
參數(shù)資料
| 型號(hào)： | M36WT864BF |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| 中文描述： | 64兆位4Mb的x16插槽，多銀行，突發(fā)閃存和8兆位的SRAM為512k x16，內(nèi)存產(chǎn)品多 |
| 文件頁(yè)數(shù)： | 88/92頁(yè) |
| 文件大?。?/td> | 624K |
| 代理商： | M36WT864BF |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)當(dāng)前第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)
M36WT864TF, M36WT864BF
88/92
APPENDIX D. FLASH COMMAND INTERFACE STATE TABLES
Table 44. Command Interface States - Modify Table, Next State
Note: 1. CI = Command Interface, CR = Configuration Register, EFP = Enhanced Factory Program, Quad EFP = Quadruple Enhanced Fac-
tory Program, DWP = Double Word Program, QWP = Quadruple Word Program, P/E. C. = Program/Erase Controller.
2. At Power-Up, all banks are in Read Array mode. A Read Array command issued to a busy bank, results in undetermined data out-
put.
3. The two cycle command should be issued to the same bank address.
4. If the P/E.C. is active, both cycles are ignored.
5. The Clear Status Register command clears the Status Register error bits except when the P/E.C. is busy or suspended.
6. EFP and Quad EFP are allowed only when Status Register bit SR0 is set to ‘0’.EFP and Quad EFP are busy if Block Address is
first EFP Address. Any other commands are treated as data.
Current CI State
Next CI State After Command Input
Read
Array
(2)
Program
WP
setup
(3,4)
Program
DWP,
QWP
Setup
(3,4)
Block
Erase,
Erase
Setup
(3,4)
EFP
Setup
Quad-
EFP
Setup
Erase
Confirm
P/E
Resume,
Block
Unlock
confirm,
EFP
Confirm
Program/
Erase
Suspend
Read
Status
Register
Clear
status
Register
(5)
Read
Electronic
signature,
Read CFI
Query
Ready
Ready
Program
Setup
Program
Setup
Ready (Lock Error)
Erase Setup EFP Setup
Quad-EFP
Setup
Ready
Lock/CR Setup
Ready
Ready (Lock Error)
OTP
Setup
Busy
Setup
OTP Busy
Program
Program Busy
Busy
Program Busy
Program
Suspended
Program Busy
Suspend
Program Suspended
Program
Busy
Erase Busy
Program Suspended
Erase
Setup
Ready (error)
Ready (error)
Busy
Erase Busy
Erase
Suspended
Erase Busy
Suspend
Erase
Suspended
Program in
Erase
Suspend
Erase Suspended
Erase Busy
Erase Suspended
Program
in Erase
Suspend
Setup
Program in Erase Suspend Busy
Busy
Program in Erase Suspend Busy
Program in
Erase
Suspend
Suspended
Program in Erase Suspend Busy
Suspend
Program in Erase Suspend Suspended
Program in
Erase
Suspend
Busy
Erase
Suspend
EFP Busy
Program in Erase Suspend Suspended
Lock/CR Setup
in Erase Suspend
Erase Suspend (Lock Error)
Erase Suspend (Lock Error)
EFP
Setup
Busy
Verify
Ready (error)
Ready (error)
EFP Busy
(6)
EFP Verify
(6)
Quad EFP Busy
(6)
Quad EFP Busy
(6)
Quad
EFP
Setup
Busy
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36WT864T10ZA6T | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864TF | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864B85ZA6T | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T70ZA6T | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864TFZA | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36WT864BFZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T10ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T70ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T85ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864TF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。