參數(shù)資料
型號(hào): M36W832Te70ZA1T
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
中文描述: 32兆位的2Mb x16插槽,引導(dǎo)塊閃存和8兆位的SRAM 512KB的x16,內(nèi)存產(chǎn)品多
文件頁(yè)數(shù): 30/64頁(yè)
文件大?。?/td> 897K
代理商: M36W832TE70ZA1T
M36W832TE, M36W832BE
30/64
Figure 10. Flash Read Mode AC Waveforms
Table 16. Flash Read AC Characteristics
Note: 1. Sampled only, not 100% tested.
2. GF may be delayed by up to t
ELQV
- t
GLQV
after the falling edge of EF without increasing t
ELQV
.
Symbol
Alt
Parameter
Flash Device
Unit
70
85
t
AVAV
t
RC
Address Valid to Next Address Valid
Min
70
85
ns
t
AVQV
t
ACC
Address Valid to Output Valid
Max
70
85
ns
t
AXQX
(1)
t
OH
Address Transition to Output Transition
Min
0
0
ns
t
EHQX
(1)
t
OH
Chip Enable High to Output Transition
Min
0
0
ns
t
EHQZ
(1)
t
HZ
Chip Enable High to Output Hi-Z
Max
20
20
ns
t
ELQV
(2)
t
CE
Chip Enable Low to Output Valid
Max
70
85
ns
t
ELQX
(1)
t
LZ
Chip Enable Low to Output Transition
Min
0
0
ns
t
GHQX
(1)
t
OH
Output Enable High to Output Transition
Min
0
0
ns
t
GHQZ
(1)
t
DF
Output Enable High to Output Hi-Z
Max
20
20
ns
t
GLQV
(2)
t
OE
Output Enable Low to Output Valid
Max
20
20
ns
t
GLQX
(1)
t
OLZ
Output Enable Low to Output Transition
Min
0
0
ns
DQ0-DQ15
AI90168b
A0-A20
EF
GF
VALID
tAXQX
tAVAV
VALID
tAVQV
tELQV
tELQX
tGLQV
tGLQX
ADDR. VALID
CHIP ENABLE
OUTPUTS
ENABLED
DATA VALID
STANDBY
tGHQX
tGHQZ
tEHQX
tEHQZ
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