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參數(shù)資料
| 型號(hào)： | M36W832Be85ZA6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| 中文描述： | 32兆位的2Mb x16插槽，引導(dǎo)塊閃存和8兆位的SRAM 512KB的x16，內(nèi)存產(chǎn)品多 |
| 文件頁(yè)數(shù)： | 9/64頁(yè) |
| 文件大?。?/td> | 897K |
| 代理商： | M36W832BE85ZA6T |
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M36W832TE, M36W832BE
V
SSF
and V
SSS
Ground.
V
SSF
and V
SSS
are the
ground reference for all voltage measurements in
the Flash and SRAM chips, respectively.
Note: Each device in a system should have V
D-
DF
, V
DDQF
and V
PPF
decoupled with a 0.1μF ca-
pacitor close to the pin. See Figure 9, AC
Measurement Load Circuit. The PCB trace
widths should be sufficient to carry the re-
quired V
PPF
program and erase currents.
FUNCTIONAL DESCRIPTION
The Flash and SRAM components have separate
power supplies and grounds and are distinguished
by three chip enable inputs: EF for the Flash mem-
ory and, E1S and E2S for the SRAM.
Recommended operating conditions do not allow
both the Flash and the SRAM to be in active mode
at the same time. The most common example is
simultaneous read operations on the Flash and
the SRAM which would result in a data bus con-
tention. Therefore it is recommended to put the
SRAM in the high impedance state when reading
the Flash and vice versa (see Table 2 Main Oper-
ation Modes for details).
Figure 4. Functional Block Diagram
AI90163
Flash Memory
32 Mbit (x16)
VSSF
EF
GF
WF
RPF
WPF
E1S
E2S
GS
WS
UBS
LBS
DQ0-DQ15
VDDF
VPPF
A19-A20
A0-A18
SRAM
8 Mbit (x16)
VSSS
VDDS
VDDQF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36W832BEZA | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832TE | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832Te70ZA1S | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832Te70ZA1T | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832Te70ZA6S | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36W832BEZA | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832TE | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832TE70ZA1S | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832TE70ZA1T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832TE70ZA6S | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
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