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參數(shù)資料
| 型號(hào)： | M36W832Be85ZA6S |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| 中文描述： | 32兆位的2Mb x16插槽，引導(dǎo)塊閃存和8兆位的SRAM 512KB的x16，內(nèi)存產(chǎn)品多 |
| 文件頁(yè)數(shù)： | 28/64頁(yè) |
| 文件大?。?/td> | 897K |
| 代理商： | M36W832BE85ZA6S |
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M36W832TE, M36W832BE
28/64
Table 15. DC Characteristics
Symbol
Parameter
Device
Test Condition
Min
Typ
Max
Unit
I
LI
Input Leakage Current
Flash &
SRAM
0V
≤
V
IN
≤
V
DDQF
±2
μA
I
LO
Output Leakage Current
Flash
0V
≤
V
OUT
≤
V
DDQF,
±10
μA
SRAM
0V
≤
V
OUT
≤
V
DDQF,
SRAM Outputs Hi-Z
±1
μA
I
DDS
V
DD
Standby Current
Flash
EF = V
DDQF
± 0.2V
V
DDQF
= V
DDF
max
15
50
μA
SRAM
E1S
≥
V
DDS
– 0.3V
or E2S
≤
0.3V
V
IN
≥
V
DDS
– 0.3V or V
IN
≤
0.3V
f = f
max
(Address and Data
inputs only)
f = 0 (GS, WS, UBS and LBS)
8
25
μA
E1S
≥
V
DDS
– 0.3V
or E2S
≤
0.3V
V
IN
≥
V
DDS
– 0.3V or V
IN
≤
0.3V
f = 0, V
DDS
= V
DDS
max
8
25
μA
I
DDD
Supply Current
(Reset)
Flash
RPF = V
SSF
± 0.2V
15
50
μA
I
DD
Supply Current
SRAM
V
OUT
= 0mA
f = f
max
= 1/t
AVAV
, CMOS levels
V
DDS
= V
DDS
max
7
15
mA
I
OUT
= 0 mA, f = 1MHz, CMOS
Levels
1
2
mA
I
DDR
Supply Current
(Read)
Flash
EF = V
IL
, GF
=
V
IH,
f = 5 MHz
9
18
mA
I
DDW
Supply Current
(Program)
Flash
Program in progress
V
PPF
= 12V ± 5%
5
10
mA
Program in progress
V
PPF
= V
DDF
10
20
mA
I
DDE
Supply Current
(Erase)
Flash
Erase in progress
V
PPF
= 12V ± 5%
5
20
mA
Erase in progress
V
PPF
= V
DDF
10
20
mA
I
DDES
Supply Current
(Program/Erase
Suspend)
Flash
EF = V
DDQF
± 0.2V,
Erase suspended
15
50
μA
I
PP
Program Current
(Read or Standby)
Flash
V
PPF
> V
DDF
400
μA
I
PP1
V
PPF
≤
V
DDF
1
5
μA
I
PP2
Program Current
(Reset)
Flash
RPF = V
SSF
± 0.2V
1
5
μA
I
PPW
Program Current
(Program)
Flash
Program in progress
V
PPF
= 12V ± 5%
1
10
mA
Program in progress
V
PPF
= V
DDF
1
5
μA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36W832Be85ZA6T | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832BEZA | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832TE | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832Te70ZA1S | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832Te70ZA1T | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36W832BE85ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832BEZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832TE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832TE70ZA1S | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832TE70ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
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