參數(shù)資料
型號(hào): M36W0R6050T1ZAQF
廠商: 意法半導(dǎo)體
英文描述: 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package
中文描述: 64兆位(4兆】16日,多銀行,突發(fā))閃存和32兆位(2字節(jié)】16)移動(dòng)存儲(chǔ)芯片,多芯片封裝
文件頁數(shù): 15/22頁
文件大?。?/td> 159K
代理商: M36W0R6050T1ZAQF
M36W0R6050T1, M36W0R6050B1
Maximum rating
15/22
4
Maximum rating
Stressing the device above the rating listed in the Absolute Maximum Ratings table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
Table 3.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
Min
Max
T
A
Ambient Operating Temperature
–30
85
°C
T
BIAS
Temperature Under Bias
–40
125
°C
T
STG
Storage Temperature
–55
125
°C
V
IO
Input or Output Voltage
–0.5
V
DDQF
+0.6
V
V
DDF
Flash Memory Core Supply Voltage
–0.2
2.45
V
V
DDQF
Input/Output Supply Voltage
–0.2
2.45
V
V
DDP
PSRAM Supply Voltage
–0.5
3.6
V
V
PPF
Flash Memory Program Voltage
–0.2
14
V
I
O
Output Short Circuit Current
100
mA
t
VPPFH
Time for V
PPF
at V
PPFH
100
hours
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