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參數(shù)資料
| 型號： | M36W0R6030B0ZAQF |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| 中文描述： | 64兆位（4Mb的x16插槽，多銀行，突發(fā)）閃存和8兆位（512KB的× 16）的SRAM，多芯片封裝 |
| 文件頁數(shù)： | 13/26頁 |
| 文件大?。?/td> | 168K |
| 代理商： | M36W0R6030B0ZAQF |
13/26
M36W0R6030T0, M36W0R6030B0
DC AND AC PARAMETERS
This section summarizes the operating measure-
ment conditions, and the DC and AC characteris-
tics of the device. The parameters in the DC and
AC characteristics Tables that follow, are derived
from tests performed under the Measurement
Conditions summarized in
Table 4., Operating and
AC Measurement Conditions
. Designers should
check that the operating conditions in their circuit
match the operating conditions when relying on
the quoted parameters.
Table 4. Operating and AC Measurement Conditions
Figure 6. AC Measurement I/O Waveform
Figure 7. AC Measurement Load Circuit
Table 5. Device Capacitance
Symbol
Note: Sampled only, not 100% tested.
Parameter
Flash Memory
SRAM
Unit
Min
Max
Min
Max
V
DDF
Supply Voltage
1.7
1.95
–
–
V
V
DDS
Supply Voltage
–
–
1.7
1.95
V
V
DDQ
Supply Voltage
1.7
1.95
–
–
V
V
PPF
Supply Voltage (Factory environment)
11.4
12.6
–
–
V
V
PPF
Supply Voltage (Application environment)
–0.4
V
DDQ
+0.4
–
–
V
Ambient Operating Temperature
–40
85
–40
85
°C
Load Capacitance (C
L
)
30
30
pF
Output Circuit Resistors (R
1
, R
2
)
16.7
16.7
k
Input Rise and Fall Times
5
2
ns
Input Pulse Voltages
0 to V
DDQ
0 to V
DDS
V
Input and Output Timing Ref. Voltages
V
DDQ
/2
V
DDS
/2
V
AI06161
VDDQ
0V
VDDQ/2
AI08364B
V
DDQ
C
L
C
L
includes JIG capacitance
R
1
DEVICE
UNDER
TEST
0.1μF
V
DDQ
R
2
0.1μF
V
DDF
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
12
pF
C
OUT
Output Capacitance
V
OUT
= 0V
15
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36W0R6030B0ZAQT | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0 | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0ZAQ | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0ZAQE | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0ZAQF | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36W0R6030B0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0ZAQ | 制造商:Micron Technology Inc 功能描述: |
| M36W0R6030T0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
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