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參數(shù)資料
| 型號： | M36L0R7050L1ZAME |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package |
| 中文描述： | 128兆位（復(fù)用的I / O，多銀行，多層次，多突發(fā)）快閃記憶體，32或64兆移動存儲芯片，1.8V電源多芯片封裝 |
| 文件頁數(shù)： | 13/22頁 |
| 文件大?。?/td> | 118K |
| 代理商： | M36L0R7050L1ZAME |
M36L0R7060U1, M36L0R7060L1, M36L0R7050U1, M36L0R7050L1
Signal descriptions
13/22
2.19
V
DDQF
Supply Voltage
V
DDQF
provides the power supply to the I/O pins and enables all Outputs to be powered
independently of V
DDF
. V
DDQF
can be tied to V
DDF
or can use a separate supply.
2.20
V
PPF
Flash memory Program Supply Voltage
V
PPF
is both a control input and a power supply pin. The two functions are selected by the
voltage range applied to the pin.
If V
PPF
is kept in a low voltage range (0V to V
DDQF
) V
PPF
is seen as a control input. In this
case a voltage lower than V
PPLK
gives absolute protection against program or erase, while
V
PPF
in the V
PP1
range enables these functions (see the M58LRxxxGUL datasheet for the
relevant values). V
PPF
is only sampled at the beginning of a program or erase; a change in
its value after the operation has started does not have any effect and program or erase
operations continue.
If V
PPF
is in the range of V
PPH
it acts as a power supply pin. In this condition V
PPF
must be
stable until the Program/Erase algorithm is completed.
2.21
V
SS
Ground
V
SS
ground is the common Flash memory and PSRAM ground. It is the reference for the
core supplies. It must be connected to the system ground.
2.22
V
SSQ
Ground
V
SSQ
ground is the reference for the input/output circuitry driven by V
DDQF
. V
SSQ
must be
connected to V
SS
Each device in a system should have V
DDF
,
V
DDQF
and V
PP
decoupled with a 0.1μF ceramic
capacitor close to the pin (high frequency, inherently low inductance capacitors should be as
close as possible to the package). See
Figure 5: AC measurement load circuit
. The PCB
track widths should be sufficient to carry the required V
PP
program and erase currents.
Note:
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36L0R7050L1ZAMF | 128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package |
| M36L0R7050U1 | 128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package |
| M36L0R7050U1ZAME | 128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package |
| M36L0R7050U1ZAMF | 128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package |
| M36L0R7060L1 | 128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36L0R7050L1ZAMF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package |
| M36L0R7050L3ZSE | 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH PSRAM 160M |
| M36L0R7050L3ZSF | 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel |
| M36L0R7050L3ZSF TR | 制造商:Micron Technology Inc 功能描述:IC FLASH PSRAM 160M |
| M36L0R7050T0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
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