參數(shù)資料
型號(hào)： M36DR432D
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
中文描述： 32兆位的2Mb x16插槽，雙行，頁(yè)閃存和4兆位256K x16的SRAM，多個(gè)存儲(chǔ)產(chǎn)品
文件頁(yè)數(shù)： 21/46頁(yè)
文件大?。?/td> 330K
代理商： M36DR432D
21/46
M36DR432C, M36DR432D
Table 21. Device Geometry Definition
OffsetWord
Mode
Data
Description
27h
0016h
Device Size = 2
n
in number of bytes
28h
0001h
Flash Device Interface Code description: Asynchronous x16
29h
0000h
2Ah
0000h
Maximum number of bytes in multi-byte program or page = 2
n
2Bh
0000h
2Ch
0002h
Number of Erase Block Regions within device
bit 7 to 0 = x = number of Erase Block Regions
Note:1. x = 0 means no erase blocking, i.e. the device erases at once in "bulk."
2. x specifies the number of regions within the device containing one or more con-
tiguous Erase Blocks of the same size.
having blocking of 16KB, 8KB, four 2KB, two 16KB, and one 64KB is considered
to have 5 Erase Block Regions.
Even though two regions both contain 16KB
blocks, the fact that they are not contiguous means they are separate Erase
Block Regions.
3. By definition, symmetrically block devices have only one blocking region.
For example, a 128KB device (1Mb)
M36DR432C
M36DR432C
Erase Block Region Information
bit 31 to 16 = z, where the Erase Block(s) within this Region are (z) times 256 bytes in
size. The value z = 0 is used for 128 byte block size.
e.g. for 64KB block size, z = 0100h = 256 => 256 * 256 = 64K
bit 15 to 0 = y, where y+1 = Number of Erase Blocks of identical size within the Erase
Block Region:
e.g.
y = D15-D0 = FFFFh => y+1 = 64K blocks [maximum number]
y = 0 means no blocking (# blocks = y+1 = "1 block")
Note: y = 0 value must be used with number of block regions of one as indicated
by (x) = 0
2Dh
003Eh
2Eh
0000h
2Fh
0000h
30h
0001h
31h
0007h
32h
0000h
33h
0020h
34h
0000h
M36DR432D
M36DR432D
2Dh
0007h
2Eh
0000h
2Fh
0020h
30h
0000h
31h
003Eh
32h
0000h
33h
0000h
34h
0001h
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參數(shù)描述
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M36DR432DA85ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432DZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432-ZAT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR864CB85ZA6 功能描述:閃存 64M (4Mx16) 85ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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